Electrically induced conductivity switching in sputtered Fe 3O4 thin film

Fei Qin, Yukio Nozaki, Kimihide Matsuyama

Research output: Contribution to journalArticle

Abstract

Electric transport properties have been studied for Fe3O 4 thin films with current perpendicular to plane geometry, aiming at development of oxide spintronics devices. Excellent conductivity comparable to a bulk single crystal was attained by optimizing an under layer material and film deposition condition. A novel conductivity switching, up to three orders of magnitude, was observed. The threshold value of electric field for switching and its temperature dependence were investigated.

Original languageEnglish
Pages (from-to)85-88
Number of pages4
JournalResearch Reports on Information Science and Electrical Engineering of Kyushu University
Volume9
Issue number2
Publication statusPublished - Sep 1 2004

Fingerprint

Thin films
Magnetoelectronics
Transport properties
Electric fields
Single crystals
Oxides
Geometry
Temperature

All Science Journal Classification (ASJC) codes

  • Computer Science(all)
  • Electrical and Electronic Engineering

Cite this

Electrically induced conductivity switching in sputtered Fe 3O4 thin film. / Qin, Fei; Nozaki, Yukio; Matsuyama, Kimihide.

In: Research Reports on Information Science and Electrical Engineering of Kyushu University, Vol. 9, No. 2, 01.09.2004, p. 85-88.

Research output: Contribution to journalArticle

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