Electric transport properties have been studied for Fe3O 4 thin films with current perpendicular to plane geometry, aiming at development of oxide spintronics devices. Excellent conductivity comparable to a bulk single crystal was attained by optimizing an under layer material and film deposition condition. A novel conductivity switching, up to three orders of magnitude, was observed. The threshold value of electric field for switching and its temperature dependence were investigated.
|Number of pages||4|
|Journal||Research Reports on Information Science and Electrical Engineering of Kyushu University|
|Publication status||Published - Sep 1 2004|
All Science Journal Classification (ASJC) codes
- Computer Science(all)
- Electrical and Electronic Engineering