Electrode contact study for SiGe thin film operated at high temperature

Lionel Fabrice Houlet, Woosuck Shin, Maiko Nishibori, Noriya Izu, Toshio Itoh, Ichiro Matsubara

Research output: Contribution to journalArticle

Abstract

A study on the electrode contact of the sputtered SiGe thin film is reported for application of devices working at high temperature. Surface morphological characterization with optical microscope and AFM (atomic force microscope) together with the electrical characterization by TLM measurements (transmission line method) were performed before and after aging at 500 °C for 24 h using various sputtered multilayer electrodes, Ti/Au/Ti, Ta/Pt/Ta and Ti/Pt/Ti, on 300-nm B-doped SiGe thin film deposited by magnetron sputtering and furnace crystallisation at high temperature. After aging at 500 °C for 24 h, the Ti/Au/Ti multilayer electrodes seriously degraded to be non-ohmic contact, showing rough surface morphology. The Ti/Pt/Ti metal layers showed the lowest specific contact, resistivity before and after aging, 1.46 × 10 -3 Ω cm 2 and 1.68 × 10 2 Ω cm 2 respectively.

Original languageEnglish
Pages (from-to)4999-5006
Number of pages8
JournalApplied Surface Science
Volume254
Issue number16
DOIs
Publication statusPublished - Jun 15 2008
Externally publishedYes

Fingerprint

Aging of materials
Thin films
Electrodes
Multilayers
Microscopes
Crystallization
Magnetron sputtering
Temperature
Surface morphology
Electric lines
Furnaces
Metals

All Science Journal Classification (ASJC) codes

  • Surfaces, Coatings and Films

Cite this

Electrode contact study for SiGe thin film operated at high temperature. / Houlet, Lionel Fabrice; Shin, Woosuck; Nishibori, Maiko; Izu, Noriya; Itoh, Toshio; Matsubara, Ichiro.

In: Applied Surface Science, Vol. 254, No. 16, 15.06.2008, p. 4999-5006.

Research output: Contribution to journalArticle

Houlet, Lionel Fabrice ; Shin, Woosuck ; Nishibori, Maiko ; Izu, Noriya ; Itoh, Toshio ; Matsubara, Ichiro. / Electrode contact study for SiGe thin film operated at high temperature. In: Applied Surface Science. 2008 ; Vol. 254, No. 16. pp. 4999-5006.
@article{cc237c5f007f4002a948a2da48c97408,
title = "Electrode contact study for SiGe thin film operated at high temperature",
abstract = "A study on the electrode contact of the sputtered SiGe thin film is reported for application of devices working at high temperature. Surface morphological characterization with optical microscope and AFM (atomic force microscope) together with the electrical characterization by TLM measurements (transmission line method) were performed before and after aging at 500 °C for 24 h using various sputtered multilayer electrodes, Ti/Au/Ti, Ta/Pt/Ta and Ti/Pt/Ti, on 300-nm B-doped SiGe thin film deposited by magnetron sputtering and furnace crystallisation at high temperature. After aging at 500 °C for 24 h, the Ti/Au/Ti multilayer electrodes seriously degraded to be non-ohmic contact, showing rough surface morphology. The Ti/Pt/Ti metal layers showed the lowest specific contact, resistivity before and after aging, 1.46 × 10 -3 Ω cm 2 and 1.68 × 10 2 Ω cm 2 respectively.",
author = "Houlet, {Lionel Fabrice} and Woosuck Shin and Maiko Nishibori and Noriya Izu and Toshio Itoh and Ichiro Matsubara",
year = "2008",
month = "6",
day = "15",
doi = "10.1016/j.apsusc.2008.01.162",
language = "English",
volume = "254",
pages = "4999--5006",
journal = "Applied Surface Science",
issn = "0169-4332",
publisher = "Elsevier",
number = "16",

}

TY - JOUR

T1 - Electrode contact study for SiGe thin film operated at high temperature

AU - Houlet, Lionel Fabrice

AU - Shin, Woosuck

AU - Nishibori, Maiko

AU - Izu, Noriya

AU - Itoh, Toshio

AU - Matsubara, Ichiro

PY - 2008/6/15

Y1 - 2008/6/15

N2 - A study on the electrode contact of the sputtered SiGe thin film is reported for application of devices working at high temperature. Surface morphological characterization with optical microscope and AFM (atomic force microscope) together with the electrical characterization by TLM measurements (transmission line method) were performed before and after aging at 500 °C for 24 h using various sputtered multilayer electrodes, Ti/Au/Ti, Ta/Pt/Ta and Ti/Pt/Ti, on 300-nm B-doped SiGe thin film deposited by magnetron sputtering and furnace crystallisation at high temperature. After aging at 500 °C for 24 h, the Ti/Au/Ti multilayer electrodes seriously degraded to be non-ohmic contact, showing rough surface morphology. The Ti/Pt/Ti metal layers showed the lowest specific contact, resistivity before and after aging, 1.46 × 10 -3 Ω cm 2 and 1.68 × 10 2 Ω cm 2 respectively.

AB - A study on the electrode contact of the sputtered SiGe thin film is reported for application of devices working at high temperature. Surface morphological characterization with optical microscope and AFM (atomic force microscope) together with the electrical characterization by TLM measurements (transmission line method) were performed before and after aging at 500 °C for 24 h using various sputtered multilayer electrodes, Ti/Au/Ti, Ta/Pt/Ta and Ti/Pt/Ti, on 300-nm B-doped SiGe thin film deposited by magnetron sputtering and furnace crystallisation at high temperature. After aging at 500 °C for 24 h, the Ti/Au/Ti multilayer electrodes seriously degraded to be non-ohmic contact, showing rough surface morphology. The Ti/Pt/Ti metal layers showed the lowest specific contact, resistivity before and after aging, 1.46 × 10 -3 Ω cm 2 and 1.68 × 10 2 Ω cm 2 respectively.

UR - http://www.scopus.com/inward/record.url?scp=43049165791&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=43049165791&partnerID=8YFLogxK

U2 - 10.1016/j.apsusc.2008.01.162

DO - 10.1016/j.apsusc.2008.01.162

M3 - Article

AN - SCOPUS:43049165791

VL - 254

SP - 4999

EP - 5006

JO - Applied Surface Science

JF - Applied Surface Science

SN - 0169-4332

IS - 16

ER -