@inproceedings{b7b0880daff146fe9208a6125cc1c5b9,
title = "Electroluminescence from ZnO nanowire-based heterojunction LED",
abstract = "We have demonstrated that fabrication of the ZnO nanowire/GaN hetero-junction light emitting diode (LED) by contacting the tip of the ZnO nanowires with the GaN film, and UV electroluminescence from the p-n junction. In this study, we fabricated the heterojunction by directly-growth of the ZnO nanowires on the GaN film using nanoparticleassisted pulsed laser deposition. Photoluminescence spectrum of the ZnO nanowires showed a weak near-band-edge ultraviolet (UV) emission and a visible broad emission, which was related to transition by ZnO defect state. We applied a selective laser irradiation to the p-n junction of the ZnO-based LED. The UV emission was strongly enhanced from the laser-irradiated p-n junction.",
author = "Daisuke Nakamura and N. Tetsuyama and T. Shimogaki and M. Higashihata and Hiroshi Ikenoue and T. Okada",
year = "2014",
month = jan,
day = "1",
doi = "10.1117/12.2039705",
language = "English",
isbn = "9780819499004",
series = "Proceedings of SPIE - The International Society for Optical Engineering",
publisher = "SPIE",
booktitle = "Oxide-Based Materials and Devices V",
address = "United States",
note = "5th Annual Oxide Based Materials and Devices Conference ; Conference date: 02-02-2014 Through 05-02-2014",
}