Electroluminescence mechanisms in organic light emitting devices employing a europium chelate doped in a wide energy gap bipolar conducting host

Chihaya Adachi, Marc A. Baldo, Stephen R. Forrest

Research output: Contribution to journalArticle

419 Citations (Scopus)

Abstract

The mechanism for energy transfer leading to electroluminescence (EL) of a lanthanide complex, Eu(TTA)3phen (TTA=thenoyltrifluoroacetone,phen=1,10-phenanthroline), doped into 4,4′-N,N′-dicarbazole-biphenyl (CBP) host is investigated. With the device structure of anode/hole transport layer/Eu(TTA)3phen(1%):CPB/electron transport layer/cathode, we achieve a maximum external EL quantum efficiency (η) of 1.4% at a current density of 0.4 mA/cm2. Saturated red Eu3+ emission based on 5Dx-7Fx transitions is centered at a wavelength of 612 nm with a full width at half maximum of 3 nm. From analysis of the electroluminescent and photoluminescent spectra, and the current density-voltage characteristics, we conclude that direct trapping of holes and electrons and subsequent formation of the excitons occurs on the dopant, leading to high quantum efficiencies at low current densities. With increasing current between 1 and 100 mA/cm2, however, a significant decrease of η along with an increase in CBP host emission is observed. We demonstrate that the decrease in η at high current densities can be explained by triplet-triplet annihilation.

Original languageEnglish
Pages (from-to)8049-8055
Number of pages7
JournalJournal of Applied Physics
Volume87
Issue number11
DOIs
Publication statusPublished - Jun 1 2000

Fingerprint

europium
chelates
electroluminescence
current density
conduction
quantum efficiency
low currents
high current
anodes
electrons
cathodes
energy transfer
trapping
excitons
electric potential
wavelengths

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

Electroluminescence mechanisms in organic light emitting devices employing a europium chelate doped in a wide energy gap bipolar conducting host. / Adachi, Chihaya; Baldo, Marc A.; Forrest, Stephen R.

In: Journal of Applied Physics, Vol. 87, No. 11, 01.06.2000, p. 8049-8055.

Research output: Contribution to journalArticle

@article{bcd6f66be58e4969bde4f562da2d81f6,
title = "Electroluminescence mechanisms in organic light emitting devices employing a europium chelate doped in a wide energy gap bipolar conducting host",
abstract = "The mechanism for energy transfer leading to electroluminescence (EL) of a lanthanide complex, Eu(TTA)3phen (TTA=thenoyltrifluoroacetone,phen=1,10-phenanthroline), doped into 4,4′-N,N′-dicarbazole-biphenyl (CBP) host is investigated. With the device structure of anode/hole transport layer/Eu(TTA)3phen(1{\%}):CPB/electron transport layer/cathode, we achieve a maximum external EL quantum efficiency (η) of 1.4{\%} at a current density of 0.4 mA/cm2. Saturated red Eu3+ emission based on 5Dx-7Fx transitions is centered at a wavelength of 612 nm with a full width at half maximum of 3 nm. From analysis of the electroluminescent and photoluminescent spectra, and the current density-voltage characteristics, we conclude that direct trapping of holes and electrons and subsequent formation of the excitons occurs on the dopant, leading to high quantum efficiencies at low current densities. With increasing current between 1 and 100 mA/cm2, however, a significant decrease of η along with an increase in CBP host emission is observed. We demonstrate that the decrease in η at high current densities can be explained by triplet-triplet annihilation.",
author = "Chihaya Adachi and Baldo, {Marc A.} and Forrest, {Stephen R.}",
year = "2000",
month = "6",
day = "1",
doi = "10.1063/1.373496",
language = "English",
volume = "87",
pages = "8049--8055",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "American Institute of Physics Publising LLC",
number = "11",

}

TY - JOUR

T1 - Electroluminescence mechanisms in organic light emitting devices employing a europium chelate doped in a wide energy gap bipolar conducting host

AU - Adachi, Chihaya

AU - Baldo, Marc A.

AU - Forrest, Stephen R.

PY - 2000/6/1

Y1 - 2000/6/1

N2 - The mechanism for energy transfer leading to electroluminescence (EL) of a lanthanide complex, Eu(TTA)3phen (TTA=thenoyltrifluoroacetone,phen=1,10-phenanthroline), doped into 4,4′-N,N′-dicarbazole-biphenyl (CBP) host is investigated. With the device structure of anode/hole transport layer/Eu(TTA)3phen(1%):CPB/electron transport layer/cathode, we achieve a maximum external EL quantum efficiency (η) of 1.4% at a current density of 0.4 mA/cm2. Saturated red Eu3+ emission based on 5Dx-7Fx transitions is centered at a wavelength of 612 nm with a full width at half maximum of 3 nm. From analysis of the electroluminescent and photoluminescent spectra, and the current density-voltage characteristics, we conclude that direct trapping of holes and electrons and subsequent formation of the excitons occurs on the dopant, leading to high quantum efficiencies at low current densities. With increasing current between 1 and 100 mA/cm2, however, a significant decrease of η along with an increase in CBP host emission is observed. We demonstrate that the decrease in η at high current densities can be explained by triplet-triplet annihilation.

AB - The mechanism for energy transfer leading to electroluminescence (EL) of a lanthanide complex, Eu(TTA)3phen (TTA=thenoyltrifluoroacetone,phen=1,10-phenanthroline), doped into 4,4′-N,N′-dicarbazole-biphenyl (CBP) host is investigated. With the device structure of anode/hole transport layer/Eu(TTA)3phen(1%):CPB/electron transport layer/cathode, we achieve a maximum external EL quantum efficiency (η) of 1.4% at a current density of 0.4 mA/cm2. Saturated red Eu3+ emission based on 5Dx-7Fx transitions is centered at a wavelength of 612 nm with a full width at half maximum of 3 nm. From analysis of the electroluminescent and photoluminescent spectra, and the current density-voltage characteristics, we conclude that direct trapping of holes and electrons and subsequent formation of the excitons occurs on the dopant, leading to high quantum efficiencies at low current densities. With increasing current between 1 and 100 mA/cm2, however, a significant decrease of η along with an increase in CBP host emission is observed. We demonstrate that the decrease in η at high current densities can be explained by triplet-triplet annihilation.

UR - http://www.scopus.com/inward/record.url?scp=1942466137&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=1942466137&partnerID=8YFLogxK

U2 - 10.1063/1.373496

DO - 10.1063/1.373496

M3 - Article

AN - SCOPUS:1942466137

VL - 87

SP - 8049

EP - 8055

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 11

ER -