We succeeded in observing electroluminescence (EL) of 2,4-bis(4- (2′ -thiophene-yl)phenyl)thio-phene (TPTPT) as an active layer in an organic field-effect transistor (OFET). In particular, an OFET with a short channel of dSD=0.8 μm demonstrated higher EL efficiency than one with a much longer channel (dSD =9.8 μm). We observed a maximum EL quantum efficiency (ηmax) of 6.4×10-3 % in the short-channel-length device at an applied source-drain voltage of Vd=-100 V and a gate voltage of Vg=-40 V. From the OFET characteristics, although the TPTPT layer demonstrated typical p -type operation, the occurrence of EL clearly indicated simultaneous hole and electron injection from the source and drain electronics, respectively, under high Vd and Vg.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)