ELECTRON-BEAM EXPOSURE EPITAXY (EBE-EPITAXY) FOR THE FORMATION OF SOI-GaAs films on CaF//2/Si(111) STRUCTURES.

Hee Chul Lee, Tanemasa Asano, Hiroshi Ishiwara, Seigo Kanemaru, Seijiro Furukawa

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

A novel heteroepitaxy technique, which we call electron-beam exposure epitaxy (EBE epitaxy), has been employed in growing GaAs films on CaF//2/Si(111) structures. In this method, prior to the growth of GaAs films, the surfaces of CaF//2 are exposed to an electron-beam under impingement of arsenic fluxes. Consequently, thin GaAs films with excellent crystallinity and smooth surfaces could be obtained on the CaF//2/Si(111) structures. The electron beam exposure effect strongly depended upon the electron dose. It has been found that the GaAs films grown by this method have preferentially and dominantly type A orientation which is identical to that of the CaF//2. Cross-sectional transmission electron microscopy has shown that the defect density in the GaAs films is reduced by employing the EBE epitaxy.

Original languageEnglish
Title of host publicationConference on Solid State Devices and Materials
PublisherJapan Soc of Applied Physics
Pages163-166
Number of pages4
ISBN (Print)4930813212
Publication statusPublished - Dec 1 1987
Externally publishedYes

Fingerprint

Epitaxial growth
Electron beams
Defect density
Film growth
Arsenic
Fluxes
Transmission electron microscopy
Thin films
Electrons

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Cite this

Lee, H. C., Asano, T., Ishiwara, H., Kanemaru, S., & Furukawa, S. (1987). ELECTRON-BEAM EXPOSURE EPITAXY (EBE-EPITAXY) FOR THE FORMATION OF SOI-GaAs films on CaF//2/Si(111) STRUCTURES. In Conference on Solid State Devices and Materials (pp. 163-166). Japan Soc of Applied Physics.

ELECTRON-BEAM EXPOSURE EPITAXY (EBE-EPITAXY) FOR THE FORMATION OF SOI-GaAs films on CaF//2/Si(111) STRUCTURES. / Lee, Hee Chul; Asano, Tanemasa; Ishiwara, Hiroshi; Kanemaru, Seigo; Furukawa, Seijiro.

Conference on Solid State Devices and Materials. Japan Soc of Applied Physics, 1987. p. 163-166.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Lee, HC, Asano, T, Ishiwara, H, Kanemaru, S & Furukawa, S 1987, ELECTRON-BEAM EXPOSURE EPITAXY (EBE-EPITAXY) FOR THE FORMATION OF SOI-GaAs films on CaF//2/Si(111) STRUCTURES. in Conference on Solid State Devices and Materials. Japan Soc of Applied Physics, pp. 163-166.
Lee HC, Asano T, Ishiwara H, Kanemaru S, Furukawa S. ELECTRON-BEAM EXPOSURE EPITAXY (EBE-EPITAXY) FOR THE FORMATION OF SOI-GaAs films on CaF//2/Si(111) STRUCTURES. In Conference on Solid State Devices and Materials. Japan Soc of Applied Physics. 1987. p. 163-166
Lee, Hee Chul ; Asano, Tanemasa ; Ishiwara, Hiroshi ; Kanemaru, Seigo ; Furukawa, Seijiro. / ELECTRON-BEAM EXPOSURE EPITAXY (EBE-EPITAXY) FOR THE FORMATION OF SOI-GaAs films on CaF//2/Si(111) STRUCTURES. Conference on Solid State Devices and Materials. Japan Soc of Applied Physics, 1987. pp. 163-166
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abstract = "A novel heteroepitaxy technique, which we call electron-beam exposure epitaxy (EBE epitaxy), has been employed in growing GaAs films on CaF//2/Si(111) structures. In this method, prior to the growth of GaAs films, the surfaces of CaF//2 are exposed to an electron-beam under impingement of arsenic fluxes. Consequently, thin GaAs films with excellent crystallinity and smooth surfaces could be obtained on the CaF//2/Si(111) structures. The electron beam exposure effect strongly depended upon the electron dose. It has been found that the GaAs films grown by this method have preferentially and dominantly type A orientation which is identical to that of the CaF//2. Cross-sectional transmission electron microscopy has shown that the defect density in the GaAs films is reduced by employing the EBE epitaxy.",
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