ELECTRON-BEAM EXPOSURE EPITAXY (EBE-EPITAXY) FOR THE FORMATION OF SOI-GaAs films on CaF//2/Si(111) STRUCTURES.

Hee Chul Lee; Tanemasa Asano; Hiroshi Ishiwara; Seigo Kanemaru; Seijiro Furukawa

ELECTRON-BEAM EXPOSURE EPITAXY (EBE-EPITAXY) FOR THE FORMATION OF SOI-GaAs films on CaF//2/Si(111) STRUCTURES.

Hee Chul Lee, Tanemasa Asano, Hiroshi Ishiwara, Seigo Kanemaru, Seijiro Furukawa

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

A novel heteroepitaxy technique, which we call electron-beam exposure epitaxy (EBE epitaxy), has been employed in growing GaAs films on CaF//2/Si(111) structures. In this method, prior to the growth of GaAs films, the surfaces of CaF//2 are exposed to an electron-beam under impingement of arsenic fluxes. Consequently, thin GaAs films with excellent crystallinity and smooth surfaces could be obtained on the CaF//2/Si(111) structures. The electron beam exposure effect strongly depended upon the electron dose. It has been found that the GaAs films grown by this method have preferentially and dominantly type A orientation which is identical to that of the CaF//2. Cross-sectional transmission electron microscopy has shown that the defect density in the GaAs films is reduced by employing the EBE epitaxy.

Original language	English
Title of host publication	Conference on Solid State Devices and Materials
Publisher	Japan Soc of Applied Physics
Pages	163-166
Number of pages	4
ISBN (Print)	4930813212
Publication status	Published - Dec 1 1987
Externally published	Yes

All Science Journal Classification (ASJC) codes

Engineering(all)

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ELECTRON-BEAM EXPOSURE EPITAXY (EBE-EPITAXY) FOR THE FORMATION OF SOI-GaAs films on CaF//2/Si(111) STRUCTURES. / Lee, Hee Chul; Asano, Tanemasa; Ishiwara, Hiroshi; Kanemaru, Seigo; Furukawa, Seijiro.

Conference on Solid State Devices and Materials. Japan Soc of Applied Physics, 1987. p. 163-166.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

@inproceedings{b95caaa21984429fb708ebb11ff3c567,

title = "ELECTRON-BEAM EXPOSURE EPITAXY (EBE-EPITAXY) FOR THE FORMATION OF SOI-GaAs films on CaF//2/Si(111) STRUCTURES.",

abstract = "A novel heteroepitaxy technique, which we call electron-beam exposure epitaxy (EBE epitaxy), has been employed in growing GaAs films on CaF//2/Si(111) structures. In this method, prior to the growth of GaAs films, the surfaces of CaF//2 are exposed to an electron-beam under impingement of arsenic fluxes. Consequently, thin GaAs films with excellent crystallinity and smooth surfaces could be obtained on the CaF//2/Si(111) structures. The electron beam exposure effect strongly depended upon the electron dose. It has been found that the GaAs films grown by this method have preferentially and dominantly type A orientation which is identical to that of the CaF//2. Cross-sectional transmission electron microscopy has shown that the defect density in the GaAs films is reduced by employing the EBE epitaxy.",

author = "Lee, {Hee Chul} and Tanemasa Asano and Hiroshi Ishiwara and Seigo Kanemaru and Seijiro Furukawa",

year = "1987",

month = dec,

day = "1",

language = "English",

isbn = "4930813212",

pages = "163--166",

booktitle = "Conference on Solid State Devices and Materials",

publisher = "Japan Soc of Applied Physics",

}

TY - GEN

T1 - ELECTRON-BEAM EXPOSURE EPITAXY (EBE-EPITAXY) FOR THE FORMATION OF SOI-GaAs films on CaF//2/Si(111) STRUCTURES.

AU - Lee, Hee Chul

AU - Asano, Tanemasa

AU - Ishiwara, Hiroshi

AU - Kanemaru, Seigo

AU - Furukawa, Seijiro

PY - 1987/12/1

Y1 - 1987/12/1

N2 - A novel heteroepitaxy technique, which we call electron-beam exposure epitaxy (EBE epitaxy), has been employed in growing GaAs films on CaF//2/Si(111) structures. In this method, prior to the growth of GaAs films, the surfaces of CaF//2 are exposed to an electron-beam under impingement of arsenic fluxes. Consequently, thin GaAs films with excellent crystallinity and smooth surfaces could be obtained on the CaF//2/Si(111) structures. The electron beam exposure effect strongly depended upon the electron dose. It has been found that the GaAs films grown by this method have preferentially and dominantly type A orientation which is identical to that of the CaF//2. Cross-sectional transmission electron microscopy has shown that the defect density in the GaAs films is reduced by employing the EBE epitaxy.

AB - A novel heteroepitaxy technique, which we call electron-beam exposure epitaxy (EBE epitaxy), has been employed in growing GaAs films on CaF//2/Si(111) structures. In this method, prior to the growth of GaAs films, the surfaces of CaF//2 are exposed to an electron-beam under impingement of arsenic fluxes. Consequently, thin GaAs films with excellent crystallinity and smooth surfaces could be obtained on the CaF//2/Si(111) structures. The electron beam exposure effect strongly depended upon the electron dose. It has been found that the GaAs films grown by this method have preferentially and dominantly type A orientation which is identical to that of the CaF//2. Cross-sectional transmission electron microscopy has shown that the defect density in the GaAs films is reduced by employing the EBE epitaxy.

UR - http://www.scopus.com/inward/record.url?scp=0023592816&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0023592816&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:0023592816

SN - 4930813212

SP - 163

EP - 166

BT - Conference on Solid State Devices and Materials

PB - Japan Soc of Applied Physics

ER -