Electron-beam exposure heteroepitaxial growth of GaAs/CaF2/Si structures

Seijiro Furukawa; Hiroshi Ishiwara; Tanemasa Asano; Hee Chul Lee

doi:10.1117/12.947379

Electron-beam exposure heteroepitaxial growth of GaAs/CaF₂/Si structures

Seijiro Furukawa, Hiroshi Ishiwara, Tanemasa Asano, Hee Chul Lee

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

In near future, heteroepitaxy of semiconductor on the insulator will be very important in the field of OEIC, 3D IC, high speed IC and so on. This paper presents a novel hétéroépitaxial growth of GaAs on CaF₂/^si substrate for such applications. First of all, a brief explanation about the features of group lia fluorides(CaF₂, SrF₂, BaF₂ and their mixed crystals) is made. Then, the experimental procedure and the effectiveness of the electron-beam exposure epitaxy(EBE-epitaxy) are described. It is shown that the EBE-epitaxy is potentially capable of growing a GaAs film having a smooth surface, good crystallinity and single crystallographic orientation. The discussion is also made to clarify the mechanism of the EBE-epitaxy.

Original language	English
Pages (from-to)	139-145
Number of pages	7
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	944
DOIs	https://doi.org/10.1117/12.947379
Publication status	Published - Aug 15 1988
Externally published	Yes

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

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10.1117/12.947379

Cite this

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title = "Electron-beam exposure heteroepitaxial growth of GaAs/CaF2/Si structures",

abstract = "In near future, heteroepitaxy of semiconductor on the insulator will be very important in the field of OEIC, 3D IC, high speed IC and so on. This paper presents a novel h{\'e}t{\'e}ro{\'e}pitaxial growth of GaAs on CaF2/si substrate for such applications. First of all, a brief explanation about the features of group lia fluorides(CaF2, SrF2, BaF2 and their mixed crystals) is made. Then, the experimental procedure and the effectiveness of the electron-beam exposure epitaxy(EBE-epitaxy) are described. It is shown that the EBE-epitaxy is potentially capable of growing a GaAs film having a smooth surface, good crystallinity and single crystallographic orientation. The discussion is also made to clarify the mechanism of the EBE-epitaxy.",

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AU - Furukawa, Seijiro

AU - Ishiwara, Hiroshi

AU - Asano, Tanemasa

AU - Lee, Hee Chul

PY - 1988/8/15

Y1 - 1988/8/15

N2 - In near future, heteroepitaxy of semiconductor on the insulator will be very important in the field of OEIC, 3D IC, high speed IC and so on. This paper presents a novel hétéroépitaxial growth of GaAs on CaF2/si substrate for such applications. First of all, a brief explanation about the features of group lia fluorides(CaF2, SrF2, BaF2 and their mixed crystals) is made. Then, the experimental procedure and the effectiveness of the electron-beam exposure epitaxy(EBE-epitaxy) are described. It is shown that the EBE-epitaxy is potentially capable of growing a GaAs film having a smooth surface, good crystallinity and single crystallographic orientation. The discussion is also made to clarify the mechanism of the EBE-epitaxy.

AB - In near future, heteroepitaxy of semiconductor on the insulator will be very important in the field of OEIC, 3D IC, high speed IC and so on. This paper presents a novel hétéroépitaxial growth of GaAs on CaF2/si substrate for such applications. First of all, a brief explanation about the features of group lia fluorides(CaF2, SrF2, BaF2 and their mixed crystals) is made. Then, the experimental procedure and the effectiveness of the electron-beam exposure epitaxy(EBE-epitaxy) are described. It is shown that the EBE-epitaxy is potentially capable of growing a GaAs film having a smooth surface, good crystallinity and single crystallographic orientation. The discussion is also made to clarify the mechanism of the EBE-epitaxy.

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Electron-beam exposure heteroepitaxial growth of GaAs/CaF₂/Si structures

Abstract

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