Electron-beam exposure heteroepitaxial growth of GaAs/CaF2/Si structures

Seijiro Furukawa, Hiroshi Ishiwara, Tanemasa Asano, Hee Chul Lee

Research output: Contribution to journalArticlepeer-review


In near future, heteroepitaxy of semiconductor on the insulator will be very important in the field of OEIC, 3D IC, high speed IC and so on. This paper presents a novel hétéroépitaxial growth of GaAs on CaF2/si substrate for such applications. First of all, a brief explanation about the features of group lia fluorides(CaF2, SrF2, BaF2 and their mixed crystals) is made. Then, the experimental procedure and the effectiveness of the electron-beam exposure epitaxy(EBE-epitaxy) are described. It is shown that the EBE-epitaxy is potentially capable of growing a GaAs film having a smooth surface, good crystallinity and single crystallographic orientation. The discussion is also made to clarify the mechanism of the EBE-epitaxy.

Original languageEnglish
Pages (from-to)139-145
Number of pages7
JournalProceedings of SPIE - The International Society for Optical Engineering
Publication statusPublished - Aug 15 1988
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering


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