Electron-beam exposure heteroepitaxial growth of GaAs/CaF2/Si structures

Seijiro Furukawa, Hiroshi Ishiwara, Tanemasa Asano, Hee Chul Lee

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1 Citation (Scopus)


In near future, heteroepitaxy of semiconductor on the insulator will be very important in the field of OEIC, 3D IC, high speed IC and so on. This paper presents a novel hétéroépitaxial growth of GaAs on CaF2/si substrate for such applications. First of all, a brief explanation about the features of group lia fluorides(CaF2, SrF2, BaF2 and their mixed crystals) is made. Then, the experimental procedure and the effectiveness of the electron-beam exposure epitaxy(EBE-epitaxy) are described. It is shown that the EBE-epitaxy is potentially capable of growing a GaAs film having a smooth surface, good crystallinity and single crystallographic orientation. The discussion is also made to clarify the mechanism of the EBE-epitaxy.

Original languageEnglish
Pages (from-to)139-145
Number of pages7
JournalProceedings of SPIE - The International Society for Optical Engineering
Publication statusPublished - Aug 15 1988
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering


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