TY - JOUR
T1 - Electron-beam exposure(ebe) and epitaxy of gaas films on caf2/si structures
AU - Lee, Hee Chul
AU - Asano, Tanemasa
AU - Ishiwara, Hiroshi
AU - Furukawa, Seijiro
PY - 1988/9
Y1 - 1988/9
N2 - A novel heteroepitaxial method (electron-beam exposure and epitaxy: EBE-epitaxy) has been developed for growing GaAs films on top of CaF2/Si(111) structures. In this method, the surface of CaF2 films is modified by an electron beam (e-beam) under arsenic impingement prior to the growth of GaAs films. It has been found that this EBE-epitaxy is very effective in improving the quality of the GaAs films such as surface morphology, crystallinity and crystallographic orientation. The principal effects in the EBE-epitaxy to improve the crystalline quality are considered based on these experimental results to derive a model of the growth mechanism. Other effects, such as electron energy dependence, substrate temperature dependence during e-beam exposure and GaAs growth temperature dependence, are also investigated systematically. Subsequently, the growth condition for an ideal EBE-epitaxy is discussed.
AB - A novel heteroepitaxial method (electron-beam exposure and epitaxy: EBE-epitaxy) has been developed for growing GaAs films on top of CaF2/Si(111) structures. In this method, the surface of CaF2 films is modified by an electron beam (e-beam) under arsenic impingement prior to the growth of GaAs films. It has been found that this EBE-epitaxy is very effective in improving the quality of the GaAs films such as surface morphology, crystallinity and crystallographic orientation. The principal effects in the EBE-epitaxy to improve the crystalline quality are considered based on these experimental results to derive a model of the growth mechanism. Other effects, such as electron energy dependence, substrate temperature dependence during e-beam exposure and GaAs growth temperature dependence, are also investigated systematically. Subsequently, the growth condition for an ideal EBE-epitaxy is discussed.
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U2 - 10.1143/JJAP.27.1616
DO - 10.1143/JJAP.27.1616
M3 - Article
AN - SCOPUS:0024068861
SN - 0021-4922
VL - 27
SP - 1616
EP - 1625
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
IS - 9 R
ER -