An electron beam (EB) irradiation effect on the Si(001)-c(4×2) surface was investigated by using low-energy electron diffraction. Quarter-order spots become dim and streaky by EB irradiation below ∼40K, indicating a disordering in the c(4×2) arrangement of buckled dimers. A quantitative analysis of decreasing rates of the spot intensity at various conditions of beam current, beam energy, and substrate temperature leads to a proposal for a mechanism of the disordering in the buckled-dimer arrangement in terms of electronic excitation, electron-phonon coupling, and carrier concentration.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)