Electron emission characteristics of metal/diamond field emitters

Takashi Sugino, Yukio Iwasaki, Seiji Kawasaki, Reiji Hattori, Junji Shirafuji

Research output: Contribution to journalArticle

29 Citations (Scopus)

Abstract

Electron emission characteristics have been investigated for polycrystalline diamond films with negative electron affinity. Phosphorus-doped diamond films are deposited on Si wafers and Cu plates by hot-filament chemical vapor deposition. An Al/diamond contact is formed on the rear side of the diamond film after removing Si substrates. A significant reduction in the applied electric field for the electron emission is achieved by forming Cu/diamond and Al/diamond contacts in comparison to that of diamond on Si. It is revealed that the electron emission characteristics are dominated by electrons injected into the diamond at the metal/diamond contact.

Original languageEnglish
Pages (from-to)889-892
Number of pages4
JournalDiamond and Related Materials
Volume6
Issue number5-7
Publication statusPublished - Apr 1 1997
Externally publishedYes

Fingerprint

Diamond
Electron emission
electron emission
Diamonds
emitters
Metals
diamonds
Diamond films
diamond films
metals
negative electron affinity
Electron affinity
Phosphorus
phosphorus
Chemical vapor deposition
filaments
Electric fields
vapor deposition
wafers
electric fields

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Chemistry(all)
  • Mechanical Engineering
  • Physics and Astronomy(all)
  • Materials Chemistry
  • Electrical and Electronic Engineering

Cite this

Sugino, T., Iwasaki, Y., Kawasaki, S., Hattori, R., & Shirafuji, J. (1997). Electron emission characteristics of metal/diamond field emitters. Diamond and Related Materials, 6(5-7), 889-892.

Electron emission characteristics of metal/diamond field emitters. / Sugino, Takashi; Iwasaki, Yukio; Kawasaki, Seiji; Hattori, Reiji; Shirafuji, Junji.

In: Diamond and Related Materials, Vol. 6, No. 5-7, 01.04.1997, p. 889-892.

Research output: Contribution to journalArticle

Sugino, T, Iwasaki, Y, Kawasaki, S, Hattori, R & Shirafuji, J 1997, 'Electron emission characteristics of metal/diamond field emitters', Diamond and Related Materials, vol. 6, no. 5-7, pp. 889-892.
Sugino T, Iwasaki Y, Kawasaki S, Hattori R, Shirafuji J. Electron emission characteristics of metal/diamond field emitters. Diamond and Related Materials. 1997 Apr 1;6(5-7):889-892.
Sugino, Takashi ; Iwasaki, Yukio ; Kawasaki, Seiji ; Hattori, Reiji ; Shirafuji, Junji. / Electron emission characteristics of metal/diamond field emitters. In: Diamond and Related Materials. 1997 ; Vol. 6, No. 5-7. pp. 889-892.
@article{93e23283b1dc4dcdba8c5aefec161450,
title = "Electron emission characteristics of metal/diamond field emitters",
abstract = "Electron emission characteristics have been investigated for polycrystalline diamond films with negative electron affinity. Phosphorus-doped diamond films are deposited on Si wafers and Cu plates by hot-filament chemical vapor deposition. An Al/diamond contact is formed on the rear side of the diamond film after removing Si substrates. A significant reduction in the applied electric field for the electron emission is achieved by forming Cu/diamond and Al/diamond contacts in comparison to that of diamond on Si. It is revealed that the electron emission characteristics are dominated by electrons injected into the diamond at the metal/diamond contact.",
author = "Takashi Sugino and Yukio Iwasaki and Seiji Kawasaki and Reiji Hattori and Junji Shirafuji",
year = "1997",
month = "4",
day = "1",
language = "English",
volume = "6",
pages = "889--892",
journal = "Diamond and Related Materials",
issn = "0925-9635",
publisher = "Elsevier BV",
number = "5-7",

}

TY - JOUR

T1 - Electron emission characteristics of metal/diamond field emitters

AU - Sugino, Takashi

AU - Iwasaki, Yukio

AU - Kawasaki, Seiji

AU - Hattori, Reiji

AU - Shirafuji, Junji

PY - 1997/4/1

Y1 - 1997/4/1

N2 - Electron emission characteristics have been investigated for polycrystalline diamond films with negative electron affinity. Phosphorus-doped diamond films are deposited on Si wafers and Cu plates by hot-filament chemical vapor deposition. An Al/diamond contact is formed on the rear side of the diamond film after removing Si substrates. A significant reduction in the applied electric field for the electron emission is achieved by forming Cu/diamond and Al/diamond contacts in comparison to that of diamond on Si. It is revealed that the electron emission characteristics are dominated by electrons injected into the diamond at the metal/diamond contact.

AB - Electron emission characteristics have been investigated for polycrystalline diamond films with negative electron affinity. Phosphorus-doped diamond films are deposited on Si wafers and Cu plates by hot-filament chemical vapor deposition. An Al/diamond contact is formed on the rear side of the diamond film after removing Si substrates. A significant reduction in the applied electric field for the electron emission is achieved by forming Cu/diamond and Al/diamond contacts in comparison to that of diamond on Si. It is revealed that the electron emission characteristics are dominated by electrons injected into the diamond at the metal/diamond contact.

UR - http://www.scopus.com/inward/record.url?scp=0001269975&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0001269975&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0001269975

VL - 6

SP - 889

EP - 892

JO - Diamond and Related Materials

JF - Diamond and Related Materials

SN - 0925-9635

IS - 5-7

ER -