Electron emission characteristics have been investigated for polycrystalline diamond films with negative electron affinity. Phosphorus-doped diamond films are deposited on Si wafers and Cu plates by hot-filament chemical vapor deposition. An Al/diamond contact is formed on the rear side of the diamond film after removing Si substrates. A significant reduction in the applied electric field for the electron emission is achieved by forming Cu/diamond and Al/diamond contacts in comparison to that of diamond on Si. It is revealed that the electron emission characteristics are dominated by electrons injected into the diamond at the metal/diamond contact.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Mechanical Engineering
- Materials Chemistry
- Electrical and Electronic Engineering