Electron emission tip at extremely low bias voltage

Faridur Rahman, Seigi Mizuno

    Research output: Contribution to journalArticle

    1 Citation (Scopus)

    Abstract

    We report the invention of a modification technique of tungsten tip, which results modified tip apex capable of emitting electrons at extremely low bias voltage. Field-ion microscope induces the structural switching of the oxidized apex at room temperature, which is frozen out at low temperature. Thus modified tips exhibit an extraordinary decrease in applied bias needed for electron emission (typically from -300 to -3.8 V). Electron emission shows good angular confinement with an opening angle of less than 2°. Such special tip is repeatedly reproducible and stable for several hours at low temperature.

    Original languageEnglish
    JournalJapanese Journal of Applied Physics, Part 2: Letters
    Volume45
    Issue number29-32
    DOIs
    Publication statusPublished - Aug 11 2006

    Fingerprint

    electron emission
    electric potential
    apexes
    ion microscopes
    inventions
    tungsten
    room temperature
    electrons

    All Science Journal Classification (ASJC) codes

    • Engineering(all)
    • Physics and Astronomy (miscellaneous)
    • Physics and Astronomy(all)

    Cite this

    Electron emission tip at extremely low bias voltage. / Rahman, Faridur; Mizuno, Seigi.

    In: Japanese Journal of Applied Physics, Part 2: Letters, Vol. 45, No. 29-32, 11.08.2006.

    Research output: Contribution to journalArticle

    @article{c7c6f92444904c33b5a066c7ea27eb07,
    title = "Electron emission tip at extremely low bias voltage",
    abstract = "We report the invention of a modification technique of tungsten tip, which results modified tip apex capable of emitting electrons at extremely low bias voltage. Field-ion microscope induces the structural switching of the oxidized apex at room temperature, which is frozen out at low temperature. Thus modified tips exhibit an extraordinary decrease in applied bias needed for electron emission (typically from -300 to -3.8 V). Electron emission shows good angular confinement with an opening angle of less than 2°. Such special tip is repeatedly reproducible and stable for several hours at low temperature.",
    author = "Faridur Rahman and Seigi Mizuno",
    year = "2006",
    month = "8",
    day = "11",
    doi = "10.1143/JJAP.45.L752",
    language = "English",
    volume = "45",
    journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",
    issn = "0021-4922",
    publisher = "Institute of Physics",
    number = "29-32",

    }

    TY - JOUR

    T1 - Electron emission tip at extremely low bias voltage

    AU - Rahman, Faridur

    AU - Mizuno, Seigi

    PY - 2006/8/11

    Y1 - 2006/8/11

    N2 - We report the invention of a modification technique of tungsten tip, which results modified tip apex capable of emitting electrons at extremely low bias voltage. Field-ion microscope induces the structural switching of the oxidized apex at room temperature, which is frozen out at low temperature. Thus modified tips exhibit an extraordinary decrease in applied bias needed for electron emission (typically from -300 to -3.8 V). Electron emission shows good angular confinement with an opening angle of less than 2°. Such special tip is repeatedly reproducible and stable for several hours at low temperature.

    AB - We report the invention of a modification technique of tungsten tip, which results modified tip apex capable of emitting electrons at extremely low bias voltage. Field-ion microscope induces the structural switching of the oxidized apex at room temperature, which is frozen out at low temperature. Thus modified tips exhibit an extraordinary decrease in applied bias needed for electron emission (typically from -300 to -3.8 V). Electron emission shows good angular confinement with an opening angle of less than 2°. Such special tip is repeatedly reproducible and stable for several hours at low temperature.

    UR - http://www.scopus.com/inward/record.url?scp=34548571779&partnerID=8YFLogxK

    UR - http://www.scopus.com/inward/citedby.url?scp=34548571779&partnerID=8YFLogxK

    U2 - 10.1143/JJAP.45.L752

    DO - 10.1143/JJAP.45.L752

    M3 - Article

    AN - SCOPUS:34548571779

    VL - 45

    JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

    JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

    SN - 0021-4922

    IS - 29-32

    ER -