TY - JOUR
T1 - Electron energy-dependent formation of dislocation loops in CeO2
AU - Yasunaga, K.
AU - Yasuda, K.
AU - Matsumura, S.
AU - Sonoda, T.
N1 - Funding Information:
This study was financially supported by the Budget for Nuclear Research of the Ministry of Education, Culture, Sports, Science and Technology (MEXT) and was based on the screening and advise from the Atomic Energy Commission.
PY - 2008/6
Y1 - 2008/6
N2 - High-voltage transmission electron microscopy (HVTEM) was used to examine the formation of dislocation loops as a function of incident electron energy to reveal the formation of defects and kinetics in CeO2. In the case of electron irradiation methods with an energy range from 200 to 1250 keV, interstitial-type non-stoichiometric dislocation loops of the 1/9<1 1 1>{1 1 1} type were formed by the aggregation of oxygen ions. In contrast, interstitial-type perfect dislocation loops of the 1/2<1 1 0>{1 1 0} type were formed with electron irradiations with an energy range from 1500 to 3000 keV. The formation of perfect dislocation loops induced by incident electrons above 1500 keV indicated the displacement of both constituent ions with elastic collisions of electrons. Based on the findings of the formation and growth behavior of each interstitial-type dislocation loop caused by different displacement conditions, we estimated the threshold displacement energies of the sublattices and the migration energy of Ce vacancy in CeO2.
AB - High-voltage transmission electron microscopy (HVTEM) was used to examine the formation of dislocation loops as a function of incident electron energy to reveal the formation of defects and kinetics in CeO2. In the case of electron irradiation methods with an energy range from 200 to 1250 keV, interstitial-type non-stoichiometric dislocation loops of the 1/9<1 1 1>{1 1 1} type were formed by the aggregation of oxygen ions. In contrast, interstitial-type perfect dislocation loops of the 1/2<1 1 0>{1 1 0} type were formed with electron irradiations with an energy range from 1500 to 3000 keV. The formation of perfect dislocation loops induced by incident electrons above 1500 keV indicated the displacement of both constituent ions with elastic collisions of electrons. Based on the findings of the formation and growth behavior of each interstitial-type dislocation loop caused by different displacement conditions, we estimated the threshold displacement energies of the sublattices and the migration energy of Ce vacancy in CeO2.
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U2 - 10.1016/j.nimb.2008.03.204
DO - 10.1016/j.nimb.2008.03.204
M3 - Article
AN - SCOPUS:44649089317
SN - 0168-583X
VL - 266
SP - 2877
EP - 2881
JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
IS - 12-13
ER -