TY - JOUR
T1 - Electron field emission from nanostructured cubic boron nitride islands
AU - Teii, Kungen
AU - Matsumoto, Seiichiro
AU - Robertson, John
N1 - Funding Information:
One of the authors (K.T.) acknowledges the financial support from the Murata Science Foundation.
Copyright:
Copyright 2008 Elsevier B.V., All rights reserved.
PY - 2008
Y1 - 2008
N2 - Nanocrystal-assembled cubic boron nitride (cBN) islands are formed by using low-energy (∼20 eV) ion irradiation in an inductively coupled fluorine-containing plasma. The temporal evolution of surface morphology and roughness reveals three-dimensional island growth for initial s p2 -bonded BN and subsequent cBN, accompanied by a high frequency of renucleation. The formation of cBN islands enhances the field emission and reduces the turn-on field down to around 9 Vμm due to an increase in the island-related field. The results demonstrate the high potential of cBN for field emitters, comparable to other wide band gap semiconductors.
AB - Nanocrystal-assembled cubic boron nitride (cBN) islands are formed by using low-energy (∼20 eV) ion irradiation in an inductively coupled fluorine-containing plasma. The temporal evolution of surface morphology and roughness reveals three-dimensional island growth for initial s p2 -bonded BN and subsequent cBN, accompanied by a high frequency of renucleation. The formation of cBN islands enhances the field emission and reduces the turn-on field down to around 9 Vμm due to an increase in the island-related field. The results demonstrate the high potential of cBN for field emitters, comparable to other wide band gap semiconductors.
UR - http://www.scopus.com/inward/record.url?scp=38049008853&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=38049008853&partnerID=8YFLogxK
U2 - 10.1063/1.2830006
DO - 10.1063/1.2830006
M3 - Article
AN - SCOPUS:38049008853
VL - 92
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 1
M1 - 013115
ER -