Abstract
Nanocrystal-assembled cubic boron nitride (cBN) islands are formed by using low-energy (∼20 eV) ion irradiation in an inductively coupled fluorine-containing plasma. The temporal evolution of surface morphology and roughness reveals three-dimensional island growth for initial s p2 -bonded BN and subsequent cBN, accompanied by a high frequency of renucleation. The formation of cBN islands enhances the field emission and reduces the turn-on field down to around 9 Vμm due to an increase in the island-related field. The results demonstrate the high potential of cBN for field emitters, comparable to other wide band gap semiconductors.
| Original language | English |
|---|---|
| Article number | 013115 |
| Journal | Applied Physics Letters |
| Volume | 92 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - Jan 16 2008 |
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All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)
Cite this
Electron field emission from nanostructured cubic boron nitride islands. / Tsutsui, Kungen; Matsumoto, Seiichiro; Robertson, John.
In: Applied Physics Letters, Vol. 92, No. 1, 013115, 16.01.2008.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Electron field emission from nanostructured cubic boron nitride islands
AU - Tsutsui, Kungen
AU - Matsumoto, Seiichiro
AU - Robertson, John
PY - 2008/1/16
Y1 - 2008/1/16
N2 - Nanocrystal-assembled cubic boron nitride (cBN) islands are formed by using low-energy (∼20 eV) ion irradiation in an inductively coupled fluorine-containing plasma. The temporal evolution of surface morphology and roughness reveals three-dimensional island growth for initial s p2 -bonded BN and subsequent cBN, accompanied by a high frequency of renucleation. The formation of cBN islands enhances the field emission and reduces the turn-on field down to around 9 Vμm due to an increase in the island-related field. The results demonstrate the high potential of cBN for field emitters, comparable to other wide band gap semiconductors.
AB - Nanocrystal-assembled cubic boron nitride (cBN) islands are formed by using low-energy (∼20 eV) ion irradiation in an inductively coupled fluorine-containing plasma. The temporal evolution of surface morphology and roughness reveals three-dimensional island growth for initial s p2 -bonded BN and subsequent cBN, accompanied by a high frequency of renucleation. The formation of cBN islands enhances the field emission and reduces the turn-on field down to around 9 Vμm due to an increase in the island-related field. The results demonstrate the high potential of cBN for field emitters, comparable to other wide band gap semiconductors.
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U2 - 10.1063/1.2830006
DO - 10.1063/1.2830006
M3 - Article
AN - SCOPUS:38049008853
VL - 92
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 1
M1 - 013115
ER -