Electron field emission from nanostructured cubic boron nitride islands

Kungen Tsutsui, Seiichiro Matsumoto, John Robertson

Research output: Contribution to journalArticle

33 Citations (Scopus)

Abstract

Nanocrystal-assembled cubic boron nitride (cBN) islands are formed by using low-energy (∼20 eV) ion irradiation in an inductively coupled fluorine-containing plasma. The temporal evolution of surface morphology and roughness reveals three-dimensional island growth for initial s p2 -bonded BN and subsequent cBN, accompanied by a high frequency of renucleation. The formation of cBN islands enhances the field emission and reduces the turn-on field down to around 9 Vμm due to an increase in the island-related field. The results demonstrate the high potential of cBN for field emitters, comparable to other wide band gap semiconductors.

Original languageEnglish
Article number013115
JournalApplied Physics Letters
Volume92
Issue number1
DOIs
Publication statusPublished - Jan 16 2008

Fingerprint

boron nitrides
electron emission
field emission
ion irradiation
fluorine
nanocrystals
emitters
roughness
broadband
energy

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Electron field emission from nanostructured cubic boron nitride islands. / Tsutsui, Kungen; Matsumoto, Seiichiro; Robertson, John.

In: Applied Physics Letters, Vol. 92, No. 1, 013115, 16.01.2008.

Research output: Contribution to journalArticle

Tsutsui, Kungen ; Matsumoto, Seiichiro ; Robertson, John. / Electron field emission from nanostructured cubic boron nitride islands. In: Applied Physics Letters. 2008 ; Vol. 92, No. 1.
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