Abstract
Nanocrystal-assembled cubic boron nitride (cBN) islands are formed by using low-energy (∼20 eV) ion irradiation in an inductively coupled fluorine-containing plasma. The temporal evolution of surface morphology and roughness reveals three-dimensional island growth for initial s p2 -bonded BN and subsequent cBN, accompanied by a high frequency of renucleation. The formation of cBN islands enhances the field emission and reduces the turn-on field down to around 9 Vμm due to an increase in the island-related field. The results demonstrate the high potential of cBN for field emitters, comparable to other wide band gap semiconductors.
| Original language | English |
|---|---|
| Article number | 013115 |
| Journal | Applied Physics Letters |
| Volume | 92 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - 2008 |
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)
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Cite this
Teii, K., Matsumoto, S., & Robertson, J. (2008). Electron field emission from nanostructured cubic boron nitride islands. Applied Physics Letters, 92(1), [013115]. https://doi.org/10.1063/1.2830006