Electron field emission from self-organized micro-emitters of sp 3-bonded 5H Boron nitride with very high current density at low electric field

Shojiro Komatsu, Akio Okudo, Daisuke Kazami, Dmitri Golberg, Yubao Li, Yusuke Moriyoshi, Masaharu Shiratani, Katsuyuki Okada

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Abstract

Electron field emission with high current density ∼0.9 A/cm2 at a low electric field of 8.6 V/μm was achieved by self-organized cone-shaped emitters with dimensions on the order of ∼10 μm made of sp3-bonded 5H boron nitride, which was grown by plasma-assisted chemical vapor deposition with the assistance of 193 nm laser irradiation of the surface. The work function of this material proved to be ∼5 eV, whereas the geometrical field enhancement factor amounts to ∼106 cm -1. The known robustness of sp3-bonded BN with its excellent electron emission characteristics and the self-organization of emitter shaped structures may provide new applications for electron emitting devices.

Original languageEnglish
Pages (from-to)5182-5184
Number of pages3
JournalJournal of Physical Chemistry B
Volume108
Issue number17
Publication statusPublished - Apr 29 2004

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All Science Journal Classification (ASJC) codes

  • Surfaces, Coatings and Films
  • Physical and Theoretical Chemistry
  • Materials Chemistry

Cite this

Komatsu, S., Okudo, A., Kazami, D., Golberg, D., Li, Y., Moriyoshi, Y., ... Okada, K. (2004). Electron field emission from self-organized micro-emitters of sp 3-bonded 5H Boron nitride with very high current density at low electric field. Journal of Physical Chemistry B, 108(17), 5182-5184.