Electron microscopy analysis of microstructure of postannealed aluminum nitride template

Jesbains Kaur, Noriyuki Kuwano, Khairur Rijal Jamaludin, Masatoshi Mitsuhara, Hikaru Saito, Satoshi Hata, Shuhei Suzuki, Hideto Miyake, Kazumasa Hiramatsu, Hiroyuki Fukuyama

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Abstract

The microstructure of an AlN template after high-temperature annealing was investigated by transmission electron microscopy (TEM). The AlN template was prepared by depositing an AlN layer of about 200nm thickness on a sapphire (0001) substrate by metal-organic vapor phase epitaxy. The AlN template was annealed under (N2 + CO) atmosphere at 1500-1650 °C. TEM characterization was conducted to investigate the microstructural evolution, revealing that the postannealed AlN has a two-layer structure, the upper and lower layers of which exhibit Al and N polarities, respectively. It has been confirmed that postannealing is an effective treatment for controlling the microstructure.

Original languageEnglish
Article number065502
JournalApplied Physics Express
Volume9
Issue number6
DOIs
Publication statusPublished - Jun 2016

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All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

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