Electron microscopy with high accuracy and precision at atomic resolution: In-situ observation of a dielectric crystal under electric field

Yukio Sato, Takashi Gondo, Hiroya Miyazaki, Ryo Teranishi, Kenji Kaneko

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1 Citation (Scopus)

Abstract

Measuring atomic positions in-situ under an external electric field can provide important insights into the structure-property relationship of electronic materials. In this paper, we demonstrate picometer level accuracy and precision of atomic positions in single-crystalline SrTiO 3 under an electric field through annular dark-field scanning transmission electron microscopy. By carrying out electrical biasing in-situ electron microscopy at the atomic scale, the lattice constant was measured with a precision of 9.0 pm under an electric field of ±0.57 kV/cm. In addition, the Ti position in the SrTiO 3 unit cell was measured with an accuracy of 20.0 pm at a confidence level of greater than 93%. This opens up a possibility of characterizing functional electronic devices at atomic resolution under operative conditions.

Original languageEnglish
Article number062904
JournalApplied Physics Letters
Volume111
Issue number6
DOIs
Publication statusPublished - Aug 7 2017

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electron microscopy
electric fields
crystals
electronics
confidence
transmission electron microscopy
scanning electron microscopy
cells

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

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abstract = "Measuring atomic positions in-situ under an external electric field can provide important insights into the structure-property relationship of electronic materials. In this paper, we demonstrate picometer level accuracy and precision of atomic positions in single-crystalline SrTiO 3 under an electric field through annular dark-field scanning transmission electron microscopy. By carrying out electrical biasing in-situ electron microscopy at the atomic scale, the lattice constant was measured with a precision of 9.0 pm under an electric field of ±0.57 kV/cm. In addition, the Ti position in the SrTiO 3 unit cell was measured with an accuracy of 20.0 pm at a confidence level of greater than 93{\%}. This opens up a possibility of characterizing functional electronic devices at atomic resolution under operative conditions.",
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AU - Teranishi, Ryo

AU - Kaneko, Kenji

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AB - Measuring atomic positions in-situ under an external electric field can provide important insights into the structure-property relationship of electronic materials. In this paper, we demonstrate picometer level accuracy and precision of atomic positions in single-crystalline SrTiO 3 under an electric field through annular dark-field scanning transmission electron microscopy. By carrying out electrical biasing in-situ electron microscopy at the atomic scale, the lattice constant was measured with a precision of 9.0 pm under an electric field of ±0.57 kV/cm. In addition, the Ti position in the SrTiO 3 unit cell was measured with an accuracy of 20.0 pm at a confidence level of greater than 93%. This opens up a possibility of characterizing functional electronic devices at atomic resolution under operative conditions.

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