Electron temperature measurement in SiH4/H2 ECR plasma produced by 915 MHz microwaves

N. Itagaki, K. Sasaki, Y. Kawai

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2 Citations (Scopus)

Abstract

Plasma parameters of a SiH4/H2 electron-cyclotron-resonance (ECR) plasma are measured in detail as a function of microwave power, where 915 MHz microwaves are used. It is observed that the electron temperature (Te) in the magnetic field whose gradient is small varies from about 3 eV to 8 eV through the control of the external conditions. From the electromagnetic waves measurements and the simulations of the microwave power absorption, Te is found to depend on the spatial profiles of the power absorption, which suggests that Te in a SiH4/H2 ECR plasma can be changed by changing the power absorption profile.

Original languageEnglish
Pages (from-to)479-484
Number of pages6
JournalThin Solid Films
Volume506-507
DOIs
Publication statusPublished - May 26 2006
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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