Electron temperature measurement in SiH4/H2 ECR plasma produced by 915 MHz microwaves

N. Itagaki; K. Sasaki; Y. Kawai

doi:10.1016/j.tsf.2005.08.087

Electron temperature measurement in SiH₄/H₂ ECR plasma produced by 915 MHz microwaves

N. Itagaki, K. Sasaki, Y. Kawai

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

Plasma parameters of a SiH₄/H₂ electron-cyclotron-resonance (ECR) plasma are measured in detail as a function of microwave power, where 915 MHz microwaves are used. It is observed that the electron temperature (T_e) in the magnetic field whose gradient is small varies from about 3 eV to 8 eV through the control of the external conditions. From the electromagnetic waves measurements and the simulations of the microwave power absorption, T_e is found to depend on the spatial profiles of the power absorption, which suggests that T_e in a SiH₄/H₂ ECR plasma can be changed by changing the power absorption profile.

Original language	English
Pages (from-to)	479-484
Number of pages	6
Journal	Thin Solid Films
Volume	506-507
DOIs	https://doi.org/10.1016/j.tsf.2005.08.087
Publication status	Published - May 26 2006
Externally published	Yes

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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10.1016/j.tsf.2005.08.087

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title = "Electron temperature measurement in SiH4/H2 ECR plasma produced by 915 MHz microwaves",

abstract = "Plasma parameters of a SiH4/H2 electron-cyclotron-resonance (ECR) plasma are measured in detail as a function of microwave power, where 915 MHz microwaves are used. It is observed that the electron temperature (Te) in the magnetic field whose gradient is small varies from about 3 eV to 8 eV through the control of the external conditions. From the electromagnetic waves measurements and the simulations of the microwave power absorption, Te is found to depend on the spatial profiles of the power absorption, which suggests that Te in a SiH4/H2 ECR plasma can be changed by changing the power absorption profile.",

author = "N. Itagaki and K. Sasaki and Y. Kawai",

year = "2006",

month = may,

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doi = "10.1016/j.tsf.2005.08.087",

language = "English",

volume = "506-507",

pages = "479--484",

journal = "Thin Solid Films",

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T1 - Electron temperature measurement in SiH4/H2 ECR plasma produced by 915 MHz microwaves

AU - Itagaki, N.

AU - Sasaki, K.

AU - Kawai, Y.

PY - 2006/5/26

Y1 - 2006/5/26

N2 - Plasma parameters of a SiH4/H2 electron-cyclotron-resonance (ECR) plasma are measured in detail as a function of microwave power, where 915 MHz microwaves are used. It is observed that the electron temperature (Te) in the magnetic field whose gradient is small varies from about 3 eV to 8 eV through the control of the external conditions. From the electromagnetic waves measurements and the simulations of the microwave power absorption, Te is found to depend on the spatial profiles of the power absorption, which suggests that Te in a SiH4/H2 ECR plasma can be changed by changing the power absorption profile.

AB - Plasma parameters of a SiH4/H2 electron-cyclotron-resonance (ECR) plasma are measured in detail as a function of microwave power, where 915 MHz microwaves are used. It is observed that the electron temperature (Te) in the magnetic field whose gradient is small varies from about 3 eV to 8 eV through the control of the external conditions. From the electromagnetic waves measurements and the simulations of the microwave power absorption, Te is found to depend on the spatial profiles of the power absorption, which suggests that Te in a SiH4/H2 ECR plasma can be changed by changing the power absorption profile.

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DO - 10.1016/j.tsf.2005.08.087

M3 - Article

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SN - 0040-6090

VL - 506-507

SP - 479

EP - 484

JO - Thin Solid Films

JF - Thin Solid Films

ER -

Electron temperature measurement in SiH₄/H₂ ECR plasma produced by 915 MHz microwaves

Abstract

All Science Journal Classification (ASJC) codes

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