Electron temperature measurement in SiH4/H2 ECR plasma produced by 915 MHz microwaves

Naho Itagaki, K. Sasaki, Y. Kawai

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

Plasma parameters of a SiH4/H2 electron-cyclotron-resonance (ECR) plasma are measured in detail as a function of microwave power, where 915 MHz microwaves are used. It is observed that the electron temperature (Te) in the magnetic field whose gradient is small varies from about 3 eV to 8 eV through the control of the external conditions. From the electromagnetic waves measurements and the simulations of the microwave power absorption, Te is found to depend on the spatial profiles of the power absorption, which suggests that Te in a SiH4/H2 ECR plasma can be changed by changing the power absorption profile.

Original languageEnglish
Pages (from-to)479-484
Number of pages6
JournalThin Solid Films
Volume506-507
DOIs
Publication statusPublished - May 26 2006
Externally publishedYes

Fingerprint

Electron cyclotron resonance
Electron temperature
electron cyclotron resonance
Temperature measurement
temperature measurement
Microwaves
electron energy
Plasmas
microwaves
profiles
Electromagnetic waves
electromagnetic radiation
Magnetic fields
gradients
Temperature
temperature
magnetic fields
simulation

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Cite this

Electron temperature measurement in SiH4/H2 ECR plasma produced by 915 MHz microwaves. / Itagaki, Naho; Sasaki, K.; Kawai, Y.

In: Thin Solid Films, Vol. 506-507, 26.05.2006, p. 479-484.

Research output: Contribution to journalArticle

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AB - Plasma parameters of a SiH4/H2 electron-cyclotron-resonance (ECR) plasma are measured in detail as a function of microwave power, where 915 MHz microwaves are used. It is observed that the electron temperature (Te) in the magnetic field whose gradient is small varies from about 3 eV to 8 eV through the control of the external conditions. From the electromagnetic waves measurements and the simulations of the microwave power absorption, Te is found to depend on the spatial profiles of the power absorption, which suggests that Te in a SiH4/H2 ECR plasma can be changed by changing the power absorption profile.

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