Electron transport and photoelectric properties in glow discharge a-Si:H films prepared from disilane

R. Hattori, K. Shirakawa, J. Shirafuji

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

The electron transport and photoelectric properties in a-Si:H films prepared from disilane by an rf glow-discharge decomposition process have been measured as a function of substrate temperature and have been compared with those prepared from monosilane. At substrate temperatures below 200°C, the electron transport properties of disilane films are inferior to those monosilane films because of the preferential formation of highly disordered polysilane structures in disilane films. Substrate temperatures higher than 200°C yield disilane and monosilane films nearly the same electron mobility and photoconductivity at room temperature. The temperature dependence of the electron mobility reveals a significant difference in the tail state distribution below the conduction band between disilane and monosilane films. This suggests that local atomic structures of a-Si: H films depend critically on source gas species, even if the room-temperature properties are apparently the same.

Original languageEnglish
Pages (from-to)52-58
Number of pages7
JournalJournal of Non-Crystalline Solids
Volume104
Issue number1
DOIs
Publication statusPublished - Aug 1988
Externally publishedYes

Fingerprint

Glow discharges
glow discharges
transport properties
electrons
Electron mobility
electron mobility
Temperature
Substrates
Polysilanes
polysilanes
Electron transport properties
Photoconductivity
room temperature
Electron Transport
Conduction bands
atomic structure
photoconductivity
conduction bands
Gases
Decomposition

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Ceramics and Composites
  • Condensed Matter Physics
  • Materials Chemistry

Cite this

Electron transport and photoelectric properties in glow discharge a-Si:H films prepared from disilane. / Hattori, R.; Shirakawa, K.; Shirafuji, J.

In: Journal of Non-Crystalline Solids, Vol. 104, No. 1, 08.1988, p. 52-58.

Research output: Contribution to journalArticle

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