Electron transport of amorphous hydrogenated silicon-carbon alloy films prepared by glow discharge decomposition

T. Enomoto, Reiji Hattori, J. Shirafuji

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

Electron transport of glow-discharged C2H2- and CH4-based SiCx:H films has been studied by time-of-flight method. The electron mobility at room temperature decreases nearly exponentially with increasing carbon content in both C2H2- and CH4-based films. This decrease is mainly due to a broadening of the tail states width in SiCx:H films, as implied from the carbon content dependence of the activation energy of the electron mobility in CH4-based films.

Original languageEnglish
Pages (from-to)340-346
Number of pages7
JournalSolar Energy Materials
Volume23
Issue number2-4
DOIs
Publication statusPublished - Dec 1 1991
Externally publishedYes

Fingerprint

Glow discharges
Amorphous silicon
Decomposition
Carbon
Electron mobility
Activation energy
Electron Transport
Temperature

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Cite this

Electron transport of amorphous hydrogenated silicon-carbon alloy films prepared by glow discharge decomposition. / Enomoto, T.; Hattori, Reiji; Shirafuji, J.

In: Solar Energy Materials, Vol. 23, No. 2-4, 01.12.1991, p. 340-346.

Research output: Contribution to journalArticle

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