Electron transport of amorphous hydrogenated silicon-carbon alloy films prepared by glow discharge decomposition

T. Enomoto; R. Hattori; J. Shirafuji

doi:10.1016/0165-1633(91)90139-C

Electron transport of amorphous hydrogenated silicon-carbon alloy films prepared by glow discharge decomposition

T. Enomoto, R. Hattori, J. Shirafuji

Research output: Contribution to journal › Article

3 Citations (Scopus)

Abstract

Electron transport of glow-discharged C₂H₂- and CH₄-based SiC_x:H films has been studied by time-of-flight method. The electron mobility at room temperature decreases nearly exponentially with increasing carbon content in both C₂H₂- and CH₄-based films. This decrease is mainly due to a broadening of the tail states width in SiC_x:H films, as implied from the carbon content dependence of the activation energy of the electron mobility in CH₄-based films.

Original language	English
Pages (from-to)	340-346
Number of pages	7
Journal	Solar Energy Materials
Volume	23
Issue number	2-4
DOIs	https://doi.org/10.1016/0165-1633(91)90139-C
Publication status	Published - Dec 1 1991
Externally published	Yes

All Science Journal Classification (ASJC) codes

Engineering(all)

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10.1016/0165-1633(91)90139-C

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Enomoto, T., Hattori, R., & Shirafuji, J. (1991). Electron transport of amorphous hydrogenated silicon-carbon alloy films prepared by glow discharge decomposition. Solar Energy Materials, 23(2-4), 340-346. https://doi.org/10.1016/0165-1633(91)90139-C

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abstract = "Electron transport of glow-discharged C2H2- and CH4-based SiCx:H films has been studied by time-of-flight method. The electron mobility at room temperature decreases nearly exponentially with increasing carbon content in both C2H2- and CH4-based films. This decrease is mainly due to a broadening of the tail states width in SiCx:H films, as implied from the carbon content dependence of the activation energy of the electron mobility in CH4-based films.",

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AU - Hattori, R.

AU - Shirafuji, J.

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AB - Electron transport of glow-discharged C2H2- and CH4-based SiCx:H films has been studied by time-of-flight method. The electron mobility at room temperature decreases nearly exponentially with increasing carbon content in both C2H2- and CH4-based films. This decrease is mainly due to a broadening of the tail states width in SiCx:H films, as implied from the carbon content dependence of the activation energy of the electron mobility in CH4-based films.

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