Abstract
Electron transport of glow-discharged C2H2- and CH4-based SiCx:H films has been studied by time-of-flight method. The electron mobility at room temperature decreases nearly exponentially with increasing carbon content in both C2H2- and CH4-based films. This decrease is mainly due to a broadening of the tail states width in SiCx:H films, as implied from the carbon content dependence of the activation energy of the electron mobility in CH4-based films.
| Original language | English |
|---|---|
| Pages (from-to) | 340-346 |
| Number of pages | 7 |
| Journal | Solar Energy Materials |
| Volume | 23 |
| Issue number | 2-4 |
| DOIs | |
| Publication status | Published - Dec 1 1991 |
| Externally published | Yes |
Fingerprint
All Science Journal Classification (ASJC) codes
- Engineering(all)
Cite this
Electron transport of amorphous hydrogenated silicon-carbon alloy films prepared by glow discharge decomposition. / Enomoto, T.; Hattori, Reiji; Shirafuji, J.
In: Solar Energy Materials, Vol. 23, No. 2-4, 01.12.1991, p. 340-346.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Electron transport of amorphous hydrogenated silicon-carbon alloy films prepared by glow discharge decomposition
AU - Enomoto, T.
AU - Hattori, Reiji
AU - Shirafuji, J.
PY - 1991/12/1
Y1 - 1991/12/1
N2 - Electron transport of glow-discharged C2H2- and CH4-based SiCx:H films has been studied by time-of-flight method. The electron mobility at room temperature decreases nearly exponentially with increasing carbon content in both C2H2- and CH4-based films. This decrease is mainly due to a broadening of the tail states width in SiCx:H films, as implied from the carbon content dependence of the activation energy of the electron mobility in CH4-based films.
AB - Electron transport of glow-discharged C2H2- and CH4-based SiCx:H films has been studied by time-of-flight method. The electron mobility at room temperature decreases nearly exponentially with increasing carbon content in both C2H2- and CH4-based films. This decrease is mainly due to a broadening of the tail states width in SiCx:H films, as implied from the carbon content dependence of the activation energy of the electron mobility in CH4-based films.
UR - http://www.scopus.com/inward/record.url?scp=0026403895&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0026403895&partnerID=8YFLogxK
U2 - 10.1016/0165-1633(91)90139-C
DO - 10.1016/0165-1633(91)90139-C
M3 - Article
VL - 23
SP - 340
EP - 346
JO - Solar Energy Materials
JF - Solar Energy Materials
SN - 0165-1633
IS - 2-4
ER -