We report formation of persistent carrier electrons in hydride ion (H-) -incorporated 12CaO·7Al2O3 (C12A7) by electron-beam irradiation. The electrical conductivity of H- -doped C12A7 single crystals increases with the electron-beam irradiation dose, accompanied with a green coloration attributable to a carrier electron formation. A 25 keV electron beam with a dose of ~500 μC cm-2 fully converts the conductivity in surface layers to the depth of ~4 μm. Carrier electron formation is most likely due to electron-hole pairs generated in the electron excitation volume and subsequent energy transfer to the H- ions. The estimated carrier formation yield per an incident electron is ~30. These findings may enable a fine patterning of the conductive area without photomasks and photoresists.
|Journal||Applied Physics Letters|
|Publication status||Published - Jan 10 2005|
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)