Electronic properties of MOS capacitor exposed to inductively coupled hydrogen plasma

A. Ikeda, T. Sadou, H. Nagashima, K. Kouno, N. Yoshikawa, K. Tshukamoto, Y. Kuroki

Research output: Contribution to journalConference article

15 Citations (Scopus)

Abstract

Hydrogen plasma is interested for nano-structure cleaning on semiconductor surface at room temperature. We studied the electronic properties of MOS capacitor exposed to hydrogen plasma excited in an Inductively Coupled Plasma (ICP) source. Since ICP can generate plasma with a loop antenna put the outside of a quartz chamber, it does not induce heavy metal contamination. By electrical characterization of MOS capacitor, hydrogen related neutral electron traps were induced into SiO2 by the hydrogen plasma exposure. With increasing incident ion energy, much more neutral electron traps were induced. XPS chemical analysis suggested that Si-H bonds were formed in SiO2 with exposure to the hydrogen plasma. It is speculated that under high field stressing to the SiO2, hydrogenated Si bonds were broken by electron impact and electrons were trapped to the broken bonds in SiO2. With increasing gas pressure during the hydrogen plasma exposure, electrical degradation of the SiO2 could be reduced.

Original languageEnglish
Pages (from-to)172-177
Number of pages6
JournalThin Solid Films
Volume345
Issue number1
DOIs
Publication statusPublished - May 7 1999
EventProceedings of the 1998 11th Symposium on Plasma Science for Materials (SPSM-11) / 4th Asia-Pacific Conference on Plasma Science and Technology (APCPST-4) - Sydney, NSW, Aust
Duration: Jul 27 1998Jul 29 1998

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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    Ikeda, A., Sadou, T., Nagashima, H., Kouno, K., Yoshikawa, N., Tshukamoto, K., & Kuroki, Y. (1999). Electronic properties of MOS capacitor exposed to inductively coupled hydrogen plasma. Thin Solid Films, 345(1), 172-177. https://doi.org/10.1016/S0040-6090(99)00062-0