TY - JOUR
T1 - Electronic States of Electrochemically Doped Single-Layer Graphene Probed through Fano Resonance Effects in Raman Scattering
AU - Inukai, Daiki
AU - Koyama, Takeshi
AU - Kawahara, Kenji
AU - Ago, Hiroki
AU - Kishida, Hideo
N1 - Funding Information:
This work was supported by JSPS KAKENHI (grant nos. 17H02764, 18H03864, and 19K22113) and the DII Collaborative Graduate Program for Accelerating Innovation in Future Electronics, Nagoya University.
Publisher Copyright:
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PY - 2020/12/3
Y1 - 2020/12/3
N2 - Herein, we study the electronic states of single-layer graphene doped in an ionic liquid electrochemical cell using Raman scattering spectroscopy. The doping level dependence of the G and D′ modes at 16 different Raman spectra points is investigated by changing the applied voltage. From the fitting analysis of the experimental results, the study finds that the G mode's asymmetric line shape depends on the doping level and periodicity defect concentration. The results suggest that the periodicity defects caused by ionic liquid molecules' adsorption modify the electronic state of single-layer graphene. By scrutinizing the G phonon mode's asymmetric line shape, the background electronic Raman scattering spectra are unraveled through the Fano resonance effect.
AB - Herein, we study the electronic states of single-layer graphene doped in an ionic liquid electrochemical cell using Raman scattering spectroscopy. The doping level dependence of the G and D′ modes at 16 different Raman spectra points is investigated by changing the applied voltage. From the fitting analysis of the experimental results, the study finds that the G mode's asymmetric line shape depends on the doping level and periodicity defect concentration. The results suggest that the periodicity defects caused by ionic liquid molecules' adsorption modify the electronic state of single-layer graphene. By scrutinizing the G phonon mode's asymmetric line shape, the background electronic Raman scattering spectra are unraveled through the Fano resonance effect.
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U2 - 10.1021/acs.jpcc.0c06566
DO - 10.1021/acs.jpcc.0c06566
M3 - Article
AN - SCOPUS:85097894385
SN - 1932-7447
VL - 124
SP - 26428
EP - 26433
JO - Journal of Physical Chemistry C
JF - Journal of Physical Chemistry C
IS - 48
ER -