Electronic structure analysis of core structures of threading dislocations in GaN

Takashi Nakano, Kenta Chokawa, Masaaki Araidai, Kenji Shiraishi, Atsushi Oshiyama, Akira Kusaba, Yoshihiro Kangawa, Atsushi Tanaka, Yoshio Honda, Hiroshi Amano

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

It is known that threading dislocations degrade the performance of GaN-based electronic devices. Electronic structure of threading dislocations in GaN is not fully understood. Accordingly, we examine the electronic structures of threading dislocations in GaN using first principles calculations based on density functional theory (DFT) and to clarify the origin of the leakage current. We have comprehensively studied the relation between threading core structures and electronic property in GaN thin films. Our calculation models of threading dislocations are the edge dislocations with Burgers vectors of 1/3 [11-20] and the screw dislocations with Burgers vectors of [0001]. We examined various core types of the threading dislocations. We found that both edge dislocations and screw dislocations do not cause the leakage currents in n-type GaN based devices because no defect level appears near the conduction band bottom.

Original languageEnglish
Title of host publication2019 Compound Semiconductor Week, CSW 2019 - Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781728100807
DOIs
Publication statusPublished - May 2019
Externally publishedYes
Event2019 Compound Semiconductor Week, CSW 2019 - Nara, Japan
Duration: May 19 2019May 23 2019

Publication series

Name2019 Compound Semiconductor Week, CSW 2019 - Proceedings

Conference

Conference2019 Compound Semiconductor Week, CSW 2019
CountryJapan
CityNara
Period5/19/195/23/19

Fingerprint

Burgers vector
Edge dislocations
Screw dislocations
Dislocations (crystals)
Leakage currents
Electronic structure
electronic structure
Conduction bands
Electronic properties
Density functional theory
screw dislocations
edge dislocations
Thin films
Defects
leakage
electronics
conduction bands
density functional theory
causes
defects

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Industrial and Manufacturing Engineering
  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry
  • Atomic and Molecular Physics, and Optics

Cite this

Nakano, T., Chokawa, K., Araidai, M., Shiraishi, K., Oshiyama, A., Kusaba, A., ... Amano, H. (2019). Electronic structure analysis of core structures of threading dislocations in GaN. In 2019 Compound Semiconductor Week, CSW 2019 - Proceedings [8819270] (2019 Compound Semiconductor Week, CSW 2019 - Proceedings). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ICIPRM.2019.8819270

Electronic structure analysis of core structures of threading dislocations in GaN. / Nakano, Takashi; Chokawa, Kenta; Araidai, Masaaki; Shiraishi, Kenji; Oshiyama, Atsushi; Kusaba, Akira; Kangawa, Yoshihiro; Tanaka, Atsushi; Honda, Yoshio; Amano, Hiroshi.

2019 Compound Semiconductor Week, CSW 2019 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2019. 8819270 (2019 Compound Semiconductor Week, CSW 2019 - Proceedings).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Nakano, T, Chokawa, K, Araidai, M, Shiraishi, K, Oshiyama, A, Kusaba, A, Kangawa, Y, Tanaka, A, Honda, Y & Amano, H 2019, Electronic structure analysis of core structures of threading dislocations in GaN. in 2019 Compound Semiconductor Week, CSW 2019 - Proceedings., 8819270, 2019 Compound Semiconductor Week, CSW 2019 - Proceedings, Institute of Electrical and Electronics Engineers Inc., 2019 Compound Semiconductor Week, CSW 2019, Nara, Japan, 5/19/19. https://doi.org/10.1109/ICIPRM.2019.8819270
Nakano T, Chokawa K, Araidai M, Shiraishi K, Oshiyama A, Kusaba A et al. Electronic structure analysis of core structures of threading dislocations in GaN. In 2019 Compound Semiconductor Week, CSW 2019 - Proceedings. Institute of Electrical and Electronics Engineers Inc. 2019. 8819270. (2019 Compound Semiconductor Week, CSW 2019 - Proceedings). https://doi.org/10.1109/ICIPRM.2019.8819270
Nakano, Takashi ; Chokawa, Kenta ; Araidai, Masaaki ; Shiraishi, Kenji ; Oshiyama, Atsushi ; Kusaba, Akira ; Kangawa, Yoshihiro ; Tanaka, Atsushi ; Honda, Yoshio ; Amano, Hiroshi. / Electronic structure analysis of core structures of threading dislocations in GaN. 2019 Compound Semiconductor Week, CSW 2019 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2019. (2019 Compound Semiconductor Week, CSW 2019 - Proceedings).
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