Electronic structure in the band-gap region of protonic conductor SrZr 0.90Y0.10O3-δ

Tohru Higuchi, Hiroshige Matsumoto, Tetsuo Shimura, Keiji Yashiro, Tatsuya Kawada, Junichiro Mizusaki, Shik Shin, Takeyo Tsukamoto

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

The electronic structure in the band-gap region of protonic conductor SrZr0.90Y0.10O3-δ was studied by soft-X-ray absorption spectroscopy (XAS). The O 1s XAS spectrum of air-annealed SrZr0.90Y0.10O3-δ exhibits three distinct features, namely, the holes on top of the valence band, acceptor-induced level just above the Fermi level and Zr 4d defect-induced level at the bottom of the conduction band, which are lower in the O 1s XAS spectrum of wet-annealed SrZr0.90Y0.10O3-δ. These findings directly indicate that the doped hydrogen compensates the presence of the holes.

Original languageEnglish
Pages (from-to)5419-5420
Number of pages2
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume43
Issue number8 A
DOIs
Publication statusPublished - Aug 1 2004
Externally publishedYes

    Fingerprint

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this