TY - JOUR
T1 - Electronic structure in the band-gap region of protonic conductor SrZr 0.90Y0.10O3-δ
AU - Higuchi, Tohru
AU - Matsumoto, Hiroshige
AU - Shimura, Tetsuo
AU - Yashiro, Keiji
AU - Kawada, Tatsuya
AU - Mizusaki, Junichiro
AU - Shin, Shik
AU - Tsukamoto, Takeyo
PY - 2004/8
Y1 - 2004/8
N2 - The electronic structure in the band-gap region of protonic conductor SrZr0.90Y0.10O3-δ was studied by soft-X-ray absorption spectroscopy (XAS). The O 1s XAS spectrum of air-annealed SrZr0.90Y0.10O3-δ exhibits three distinct features, namely, the holes on top of the valence band, acceptor-induced level just above the Fermi level and Zr 4d defect-induced level at the bottom of the conduction band, which are lower in the O 1s XAS spectrum of wet-annealed SrZr0.90Y0.10O3-δ. These findings directly indicate that the doped hydrogen compensates the presence of the holes.
AB - The electronic structure in the band-gap region of protonic conductor SrZr0.90Y0.10O3-δ was studied by soft-X-ray absorption spectroscopy (XAS). The O 1s XAS spectrum of air-annealed SrZr0.90Y0.10O3-δ exhibits three distinct features, namely, the holes on top of the valence band, acceptor-induced level just above the Fermi level and Zr 4d defect-induced level at the bottom of the conduction band, which are lower in the O 1s XAS spectrum of wet-annealed SrZr0.90Y0.10O3-δ. These findings directly indicate that the doped hydrogen compensates the presence of the holes.
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U2 - 10.1143/JJAP.43.5419
DO - 10.1143/JJAP.43.5419
M3 - Article
AN - SCOPUS:6444237566
VL - 43
SP - 5419
EP - 5420
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 8 A
ER -