TY - JOUR
T1 - Electronic structure of poly(tetrafluoroethylene) studied by UPS, VUV absorption, and band calculations
AU - Seki, Kazuhiko
AU - Tanaka, Hiroshi
AU - Ohta, Toshiaki
AU - Aoki, Yuriko
AU - Imamura, Akira
AU - Fujimoto, Hitoshi
AU - Yamamoto, Hiromichi
AU - Inokuchi, Hiroo
AU - Tanaka, Hiroshi
AU - Aoki, Yuriko
AU - Yamamoto, Hiromichi
PY - 1990/1/1
Y1 - 1990/1/1
N2 - The electronic structure of poly(tetrafluoroethylene) (PTFE) was studied by UPS, VUV absorption, and ab-initio MO calculations. The UPS spectra give a photoemission threshold energy of 10.6eV, with deeper valence band features consistent with the reported XPS and the oligomer vapour UPS spectra. The UPS spectra are also consistent with the density of states derived from the calculated band structure, which indicates that the uppermost part of the valence band is formed from the C and F 2p orbitals with C-C bonding and C-F antibonding combinations. The VUV absorption spectrum shows an intense peak at 7.7eV, which most probably corresponds to the valence excitation from the top of the valence band to the bottom of the conduction band. With these data, the structure of the occupied and vacant states are deduced.
AB - The electronic structure of poly(tetrafluoroethylene) (PTFE) was studied by UPS, VUV absorption, and ab-initio MO calculations. The UPS spectra give a photoemission threshold energy of 10.6eV, with deeper valence band features consistent with the reported XPS and the oligomer vapour UPS spectra. The UPS spectra are also consistent with the density of states derived from the calculated band structure, which indicates that the uppermost part of the valence band is formed from the C and F 2p orbitals with C-C bonding and C-F antibonding combinations. The VUV absorption spectrum shows an intense peak at 7.7eV, which most probably corresponds to the valence excitation from the top of the valence band to the bottom of the conduction band. With these data, the structure of the occupied and vacant states are deduced.
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U2 - 10.1088/0031-8949/41/1/041
DO - 10.1088/0031-8949/41/1/041
M3 - Article
AN - SCOPUS:0346437626
SN - 0031-8949
VL - 41
SP - 167
EP - 171
JO - Physica Scripta
JF - Physica Scripta
IS - 1
ER -