Electronic structure of proton conducting BaCe0.90Y 0.10O3-δ

T. Higuchi; T. Tsukamoto; H. Matsumoto; T. Shimura; K. Yashiro; T. Kawada; J. Mizusaki; S. Shin; T. Hattori

doi:10.1016/j.ssi.2005.09.032

Electronic structure of proton conducting BaCe_0.90Y _0.10O_3-δ

T. Higuchi, T. Tsukamoto, H. Matsumoto, T. Shimura, K. Yashiro, T. Kawada, J. Mizusaki, S. Shin, T. Hattori

Research output: Contribution to journal › Article › peer-review

33 Citations (Scopus)

Abstract

The electronic structure of the protonic conductor Y-doped BaCeO ₃ (BaCe_0.90Y_0.10O_3-δ) has been studied by soft-X-ray spectroscopy. The valence band of H ₂-annealed BaCe_0.90Y_0.10O_3-δ, which consists of the O 2p states hybridized with Ce 4f states, shifts to the higher binding energy side by approximately 0.4 eV. In the air-annealed BaCe_0.90Y_0.10O_3-δ, holes and acceptor levels are observed at the top of the valence band and just above E _F, respectively. Their intensities are lower in H ₂-annealed BaCe_0.90Y_0.10O_3-δ. These findings indicate directly that hydrogen doping compensates for the presence of the holes.

Original language	English
Pages (from-to)	2967-2970
Number of pages	4
Journal	Solid State Ionics
Volume	176
Issue number	39-40
DOIs	https://doi.org/10.1016/j.ssi.2005.09.032
Publication status	Published - Dec 1 2005
Externally published	Yes

All Science Journal Classification (ASJC) codes

Chemistry(all)
Materials Science(all)
Condensed Matter Physics

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10.1016/j.ssi.2005.09.032

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@article{19e891dd141b4db4b8718fdeb1337b86,

title = "Electronic structure of proton conducting BaCe0.90Y 0.10O3-δ",

abstract = "The electronic structure of the protonic conductor Y-doped BaCeO 3 (BaCe0.90Y0.10O3-δ) has been studied by soft-X-ray spectroscopy. The valence band of H 2-annealed BaCe0.90Y0.10O3-δ, which consists of the O 2p states hybridized with Ce 4f states, shifts to the higher binding energy side by approximately 0.4 eV. In the air-annealed BaCe0.90Y0.10O3-δ, holes and acceptor levels are observed at the top of the valence band and just above E F, respectively. Their intensities are lower in H 2-annealed BaCe0.90Y0.10O3-δ. These findings indicate directly that hydrogen doping compensates for the presence of the holes.",

author = "T. Higuchi and T. Tsukamoto and H. Matsumoto and T. Shimura and K. Yashiro and T. Kawada and J. Mizusaki and S. Shin and T. Hattori",

year = "2005",

month = dec,

day = "1",

doi = "10.1016/j.ssi.2005.09.032",

language = "English",

volume = "176",

pages = "2967--2970",

journal = "Solid State Ionics",

issn = "0167-2738",

publisher = "Elsevier",

number = "39-40",

}

TY - JOUR

T1 - Electronic structure of proton conducting BaCe0.90Y 0.10O3-δ

AU - Higuchi, T.

AU - Tsukamoto, T.

AU - Matsumoto, H.

AU - Shimura, T.

AU - Yashiro, K.

AU - Kawada, T.

AU - Mizusaki, J.

AU - Shin, S.

AU - Hattori, T.

PY - 2005/12/1

Y1 - 2005/12/1

N2 - The electronic structure of the protonic conductor Y-doped BaCeO 3 (BaCe0.90Y0.10O3-δ) has been studied by soft-X-ray spectroscopy. The valence band of H 2-annealed BaCe0.90Y0.10O3-δ, which consists of the O 2p states hybridized with Ce 4f states, shifts to the higher binding energy side by approximately 0.4 eV. In the air-annealed BaCe0.90Y0.10O3-δ, holes and acceptor levels are observed at the top of the valence band and just above E F, respectively. Their intensities are lower in H 2-annealed BaCe0.90Y0.10O3-δ. These findings indicate directly that hydrogen doping compensates for the presence of the holes.

AB - The electronic structure of the protonic conductor Y-doped BaCeO 3 (BaCe0.90Y0.10O3-δ) has been studied by soft-X-ray spectroscopy. The valence band of H 2-annealed BaCe0.90Y0.10O3-δ, which consists of the O 2p states hybridized with Ce 4f states, shifts to the higher binding energy side by approximately 0.4 eV. In the air-annealed BaCe0.90Y0.10O3-δ, holes and acceptor levels are observed at the top of the valence band and just above E F, respectively. Their intensities are lower in H 2-annealed BaCe0.90Y0.10O3-δ. These findings indicate directly that hydrogen doping compensates for the presence of the holes.

UR - http://www.scopus.com/inward/record.url?scp=28844450691&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=28844450691&partnerID=8YFLogxK

U2 - 10.1016/j.ssi.2005.09.032

DO - 10.1016/j.ssi.2005.09.032

M3 - Article

AN - SCOPUS:28844450691

VL - 176

SP - 2967

EP - 2970

JO - Solid State Ionics

JF - Solid State Ionics

SN - 0167-2738

IS - 39-40

ER -