TY - JOUR
T1 - Electronic structure of proton conducting BaCe0.90Y 0.10O3-δ
AU - Higuchi, T.
AU - Tsukamoto, T.
AU - Matsumoto, H.
AU - Shimura, T.
AU - Yashiro, K.
AU - Kawada, T.
AU - Mizusaki, J.
AU - Shin, S.
AU - Hattori, T.
N1 - Funding Information:
This work was partially supported by New Energy and Industrial Technology Development Organization (NEDO) and the Foundation for Materials Science and Technology of Japan (MST Foundation).
PY - 2005/12
Y1 - 2005/12
N2 - The electronic structure of the protonic conductor Y-doped BaCeO 3 (BaCe0.90Y0.10O3-δ) has been studied by soft-X-ray spectroscopy. The valence band of H 2-annealed BaCe0.90Y0.10O3-δ, which consists of the O 2p states hybridized with Ce 4f states, shifts to the higher binding energy side by approximately 0.4 eV. In the air-annealed BaCe0.90Y0.10O3-δ, holes and acceptor levels are observed at the top of the valence band and just above E F, respectively. Their intensities are lower in H 2-annealed BaCe0.90Y0.10O3-δ. These findings indicate directly that hydrogen doping compensates for the presence of the holes.
AB - The electronic structure of the protonic conductor Y-doped BaCeO 3 (BaCe0.90Y0.10O3-δ) has been studied by soft-X-ray spectroscopy. The valence band of H 2-annealed BaCe0.90Y0.10O3-δ, which consists of the O 2p states hybridized with Ce 4f states, shifts to the higher binding energy side by approximately 0.4 eV. In the air-annealed BaCe0.90Y0.10O3-δ, holes and acceptor levels are observed at the top of the valence band and just above E F, respectively. Their intensities are lower in H 2-annealed BaCe0.90Y0.10O3-δ. These findings indicate directly that hydrogen doping compensates for the presence of the holes.
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U2 - 10.1016/j.ssi.2005.09.032
DO - 10.1016/j.ssi.2005.09.032
M3 - Article
AN - SCOPUS:28844450691
VL - 176
SP - 2967
EP - 2970
JO - Solid State Ionics
JF - Solid State Ionics
SN - 0167-2738
IS - 39-40
ER -