Abstract
A new approach of ion/atom beam etching is proposed, which utilizes the projectile mass dependence of the sputtering process. As a model experiment, we etch YBa 2 Cu 3 O 7-δ films using inert gases having different masses. Various etching characteristics are found to depend evidently on the mass of the gases. Substantial improvements such as 2.5-fold increase of the etching selectivity and the reduction of the etching damage of the etched area are demonstrated by using Kr. A primitive semi-empirical extension of Sigmund theory is proposed, which explains the results indeed as a mass effect and suggests the directions of further improvements. The results show a new important factor in plasma and ion/atom beam etching, which can be useful for realizing artificial structures of metal oxides.
| Original language | English |
|---|---|
| Pages (from-to) | 287-294 |
| Number of pages | 8 |
| Journal | Applied Surface Science |
| Volume | 207 |
| Issue number | 1-4 |
| DOIs | |
| Publication status | Published - Feb 28 2003 |
Fingerprint
All Science Journal Classification (ASJC) codes
- Surfaces, Coatings and Films
Cite this
Element sensitive atom beam etching based on projectile mass. / Watanabe, Yukio; Tanamura, M.
In: Applied Surface Science, Vol. 207, No. 1-4, 28.02.2003, p. 287-294.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Element sensitive atom beam etching based on projectile mass
AU - Watanabe, Yukio
AU - Tanamura, M.
PY - 2003/2/28
Y1 - 2003/2/28
N2 - A new approach of ion/atom beam etching is proposed, which utilizes the projectile mass dependence of the sputtering process. As a model experiment, we etch YBa 2 Cu 3 O 7-δ films using inert gases having different masses. Various etching characteristics are found to depend evidently on the mass of the gases. Substantial improvements such as 2.5-fold increase of the etching selectivity and the reduction of the etching damage of the etched area are demonstrated by using Kr. A primitive semi-empirical extension of Sigmund theory is proposed, which explains the results indeed as a mass effect and suggests the directions of further improvements. The results show a new important factor in plasma and ion/atom beam etching, which can be useful for realizing artificial structures of metal oxides.
AB - A new approach of ion/atom beam etching is proposed, which utilizes the projectile mass dependence of the sputtering process. As a model experiment, we etch YBa 2 Cu 3 O 7-δ films using inert gases having different masses. Various etching characteristics are found to depend evidently on the mass of the gases. Substantial improvements such as 2.5-fold increase of the etching selectivity and the reduction of the etching damage of the etched area are demonstrated by using Kr. A primitive semi-empirical extension of Sigmund theory is proposed, which explains the results indeed as a mass effect and suggests the directions of further improvements. The results show a new important factor in plasma and ion/atom beam etching, which can be useful for realizing artificial structures of metal oxides.
UR - http://www.scopus.com/inward/record.url?scp=0037470370&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0037470370&partnerID=8YFLogxK
U2 - 10.1016/S0169-4332(02)01468-X
DO - 10.1016/S0169-4332(02)01468-X
M3 - Article
AN - SCOPUS:0037470370
VL - 207
SP - 287
EP - 294
JO - Applied Surface Science
JF - Applied Surface Science
SN - 0169-4332
IS - 1-4
ER -