Element sensitive atom beam etching based on projectile mass

Yukio Watanabe, M. Tanamura

Research output: Contribution to journalArticle

Abstract

A new approach of ion/atom beam etching is proposed, which utilizes the projectile mass dependence of the sputtering process. As a model experiment, we etch YBa 2 Cu 3 O 7-δ films using inert gases having different masses. Various etching characteristics are found to depend evidently on the mass of the gases. Substantial improvements such as 2.5-fold increase of the etching selectivity and the reduction of the etching damage of the etched area are demonstrated by using Kr. A primitive semi-empirical extension of Sigmund theory is proposed, which explains the results indeed as a mass effect and suggests the directions of further improvements. The results show a new important factor in plasma and ion/atom beam etching, which can be useful for realizing artificial structures of metal oxides.

Original languageEnglish
Pages (from-to)287-294
Number of pages8
JournalApplied Surface Science
Volume207
Issue number1-4
DOIs
Publication statusPublished - Feb 28 2003

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Projectiles
Etching
Atoms
Ions
Noble Gases
Inert gases
Oxides
Sputtering
Gases
Metals
Plasmas
Experiments

All Science Journal Classification (ASJC) codes

  • Surfaces, Coatings and Films

Cite this

Element sensitive atom beam etching based on projectile mass. / Watanabe, Yukio; Tanamura, M.

In: Applied Surface Science, Vol. 207, No. 1-4, 28.02.2003, p. 287-294.

Research output: Contribution to journalArticle

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