Elimination of α-axis growth in YBa2Cu3O7-8 films on CeO2-buffered Al2O3

Katherine D. Develos, Masashi Mukaida, Masanobu Kusunoki, Shigetoshi Ohshima

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

The elimination of α-axis orientation in YBa2Cu3O7-8 (YBCO) films grown on CeO2-buffered A12O3 for microwave devices was achieved through a two-step deposition process performed at different temperatures. The growth of α-axis-oriented YBCO film was considered to be due to the impediment of the adatom mobility by the surface roughness of the underlying buffer layer. For the initial layer, the deposition was carried out at a high temperature to increase surface mobility. Next, the deposition was performed at a lower temperature as necessary for optimum α-axis-oriented growth. By this method, only a α-axis-oriented film was obtained. The characteristic surface resistance Rs(T) values for this film were significantly lower than those with mixed c-and α-axis orientations.

Original languageEnglish
Pages (from-to)1116-1120
Number of pages5
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume39
Issue number3 A
Publication statusPublished - Dec 1 2000
Externally publishedYes

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elimination
Surface resistance
Microwave devices
Adatoms
Buffer layers
Temperature
Surface roughness
adatoms
surface roughness
buffers
microwaves
temperature

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Elimination of α-axis growth in YBa2Cu3O7-8 films on CeO2-buffered Al2O3. / Develos, Katherine D.; Mukaida, Masashi; Kusunoki, Masanobu; Ohshima, Shigetoshi.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 39, No. 3 A, 01.12.2000, p. 1116-1120.

Research output: Contribution to journalArticle

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