Elimination of α-axis growth in YBa2Cu3O7-8 films on CeO2-buffered Al2O3

Katherine D. Develos; Masashi Mukaida; Masanobu Kusunoki; Shigetoshi Ohshima

doi:10.1143/jjap.39.1116

Elimination of α-axis growth in YBa₂Cu₃O_7-8 films on CeO₂-buffered Al₂O₃

Katherine D. Develos, Masashi Mukaida, Masanobu Kusunoki, Shigetoshi Ohshima

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

The elimination of α-axis orientation in YBa₂Cu₃O_7-8 (YBCO) films grown on CeO₂-buffered A1₂O₃ for microwave devices was achieved through a two-step deposition process performed at different temperatures. The growth of α-axis-oriented YBCO film was considered to be due to the impediment of the adatom mobility by the surface roughness of the underlying buffer layer. For the initial layer, the deposition was carried out at a high temperature to increase surface mobility. Next, the deposition was performed at a lower temperature as necessary for optimum α-axis-oriented growth. By this method, only a α-axis-oriented film was obtained. The characteristic surface resistance R_s(T) values for this film were significantly lower than those with mixed c-and α-axis orientations.

Original language	English
Pages (from-to)	1116-1120
Number of pages	5
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	39
Issue number	3 A
DOIs	https://doi.org/10.1143/jjap.39.1116
Publication status	Published - Jan 1 2000
Externally published	Yes

All Science Journal Classification (ASJC) codes

Engineering(all)
Physics and Astronomy(all)

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10.1143/jjap.39.1116

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title = "Elimination of α-axis growth in YBa2Cu3O7-8 films on CeO2-buffered Al2O3",

abstract = "The elimination of α-axis orientation in YBa2Cu3O7-8 (YBCO) films grown on CeO2-buffered A12O3 for microwave devices was achieved through a two-step deposition process performed at different temperatures. The growth of α-axis-oriented YBCO film was considered to be due to the impediment of the adatom mobility by the surface roughness of the underlying buffer layer. For the initial layer, the deposition was carried out at a high temperature to increase surface mobility. Next, the deposition was performed at a lower temperature as necessary for optimum α-axis-oriented growth. By this method, only a α-axis-oriented film was obtained. The characteristic surface resistance Rs(T) values for this film were significantly lower than those with mixed c-and α-axis orientations.",

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T1 - Elimination of α-axis growth in YBa2Cu3O7-8 films on CeO2-buffered Al2O3

AU - Develos, Katherine D.

AU - Mukaida, Masashi

AU - Kusunoki, Masanobu

AU - Ohshima, Shigetoshi

PY - 2000/1/1

Y1 - 2000/1/1

N2 - The elimination of α-axis orientation in YBa2Cu3O7-8 (YBCO) films grown on CeO2-buffered A12O3 for microwave devices was achieved through a two-step deposition process performed at different temperatures. The growth of α-axis-oriented YBCO film was considered to be due to the impediment of the adatom mobility by the surface roughness of the underlying buffer layer. For the initial layer, the deposition was carried out at a high temperature to increase surface mobility. Next, the deposition was performed at a lower temperature as necessary for optimum α-axis-oriented growth. By this method, only a α-axis-oriented film was obtained. The characteristic surface resistance Rs(T) values for this film were significantly lower than those with mixed c-and α-axis orientations.

AB - The elimination of α-axis orientation in YBa2Cu3O7-8 (YBCO) films grown on CeO2-buffered A12O3 for microwave devices was achieved through a two-step deposition process performed at different temperatures. The growth of α-axis-oriented YBCO film was considered to be due to the impediment of the adatom mobility by the surface roughness of the underlying buffer layer. For the initial layer, the deposition was carried out at a high temperature to increase surface mobility. Next, the deposition was performed at a lower temperature as necessary for optimum α-axis-oriented growth. By this method, only a α-axis-oriented film was obtained. The characteristic surface resistance Rs(T) values for this film were significantly lower than those with mixed c-and α-axis orientations.

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Elimination of α-axis growth in YBa₂Cu₃O_7-8 films on CeO₂-buffered Al₂O₃

Abstract

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