Abstract
The elimination of α-axis orientation in YBa2Cu3O7-8 (YBCO) films grown on CeO2-buffered A12O3 for microwave devices was achieved through a two-step deposition process performed at different temperatures. The growth of α-axis-oriented YBCO film was considered to be due to the impediment of the adatom mobility by the surface roughness of the underlying buffer layer. For the initial layer, the deposition was carried out at a high temperature to increase surface mobility. Next, the deposition was performed at a lower temperature as necessary for optimum α-axis-oriented growth. By this method, only a α-axis-oriented film was obtained. The characteristic surface resistance Rs(T) values for this film were significantly lower than those with mixed c-and α-axis orientations.
| Original language | English |
|---|---|
| Pages (from-to) | 1116-1120 |
| Number of pages | 5 |
| Journal | Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers |
| Volume | 39 |
| Issue number | 3 A |
| Publication status | Published - Dec 1 2000 |
| Externally published | Yes |
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All Science Journal Classification (ASJC) codes
- Engineering(all)
- Physics and Astronomy(all)
Cite this
Elimination of α-axis growth in YBa2Cu3O7-8 films on CeO2-buffered Al2O3. / Develos, Katherine D.; Mukaida, Masashi; Kusunoki, Masanobu; Ohshima, Shigetoshi.
In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 39, No. 3 A, 01.12.2000, p. 1116-1120.Research output: Contribution to journal › Article
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TY - JOUR
T1 - Elimination of α-axis growth in YBa2Cu3O7-8 films on CeO2-buffered Al2O3
AU - Develos, Katherine D.
AU - Mukaida, Masashi
AU - Kusunoki, Masanobu
AU - Ohshima, Shigetoshi
PY - 2000/12/1
Y1 - 2000/12/1
N2 - The elimination of α-axis orientation in YBa2Cu3O7-8 (YBCO) films grown on CeO2-buffered A12O3 for microwave devices was achieved through a two-step deposition process performed at different temperatures. The growth of α-axis-oriented YBCO film was considered to be due to the impediment of the adatom mobility by the surface roughness of the underlying buffer layer. For the initial layer, the deposition was carried out at a high temperature to increase surface mobility. Next, the deposition was performed at a lower temperature as necessary for optimum α-axis-oriented growth. By this method, only a α-axis-oriented film was obtained. The characteristic surface resistance Rs(T) values for this film were significantly lower than those with mixed c-and α-axis orientations.
AB - The elimination of α-axis orientation in YBa2Cu3O7-8 (YBCO) films grown on CeO2-buffered A12O3 for microwave devices was achieved through a two-step deposition process performed at different temperatures. The growth of α-axis-oriented YBCO film was considered to be due to the impediment of the adatom mobility by the surface roughness of the underlying buffer layer. For the initial layer, the deposition was carried out at a high temperature to increase surface mobility. Next, the deposition was performed at a lower temperature as necessary for optimum α-axis-oriented growth. By this method, only a α-axis-oriented film was obtained. The characteristic surface resistance Rs(T) values for this film were significantly lower than those with mixed c-and α-axis orientations.
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UR - http://www.scopus.com/inward/citedby.url?scp=0033751862&partnerID=8YFLogxK
M3 - Article
AN - SCOPUS:0033751862
VL - 39
SP - 1116
EP - 1120
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 3 A
ER -