Elimination of curvature in microelectromechanical-system membrane

T. Sakata, K. Yamaguchi, N. Nemoto, M. Usui, F. Sassa, K. Ono, K. Takagahara, K. Kuwabara, J. Kodate, Y. Jin

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

This paper describes the correlation between microelectromechanical-system (MEMS) membrane curvature and implanted argon in a microelectromechanical-system membrane. When a free-standing silicon membrane, fabricated through ashing of an organic film, is cleaned by exposure to argon plasma to remove the oxidized surface, the membrane is curved uniformly. The curvature is released by annealing. Total-reflection X-ray fluorescence analysis before/after annealing reveals that argon, which is implanted into the crystal lattice of silicon by argon plasma exposure, is desorbed by annealing. This analysis also indicates that there is a linear correlation between the curvature change and implanted argon.

Original languageEnglish
Title of host publicationAdvanced Semiconductor-on-Insulator Technology and Related Physics 16
Pages29-35
Number of pages7
Edition5
DOIs
Publication statusPublished - Oct 21 2013
Externally publishedYes
Event16th International Symposium on Semiconductor-on-Insulator Technology and Related Physics - 223rd ECS Meeting - Toronto, ON, Canada
Duration: May 12 2013May 16 2013

Publication series

NameECS Transactions
Number5
Volume53
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

Other16th International Symposium on Semiconductor-on-Insulator Technology and Related Physics - 223rd ECS Meeting
CountryCanada
CityToronto, ON
Period5/12/135/16/13

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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  • Cite this

    Sakata, T., Yamaguchi, K., Nemoto, N., Usui, M., Sassa, F., Ono, K., Takagahara, K., Kuwabara, K., Kodate, J., & Jin, Y. (2013). Elimination of curvature in microelectromechanical-system membrane. In Advanced Semiconductor-on-Insulator Technology and Related Physics 16 (5 ed., pp. 29-35). (ECS Transactions; Vol. 53, No. 5). https://doi.org/10.1149/05305.0029ecst