Elimination of droplets using a vane velocity filter for pulsed laser ablation of FeSi 2

Tsuyoshi Yoshitake, Gousuke Shiraishi, Kunihito Nagayama

    Research output: Contribution to journalConference article

    40 Citations (Scopus)

    Abstract

    Semiconducting β-FeSi 2 is a future promising material for Si-ULSI compatible optoelectronics devices, solar cells and IR photo-sensors. Pulsed laser deposition (PLD) make possible low temperature growth of β-FeSi 2 . However many droplets are co-deposited with the ablation species, and thus the films obtained by PLD are difficult to be applied for electronic devices. In order to eliminate droplets, a vane velocity filter was adapted. The droplets decreased drastically. The velocity distribution was obtained for various droplet sizes. The maximum velocity of droplets is at most 65 m/s. It is possible to eliminate the droplets completely at the suitable cutoff velocity of the filter.

    Original languageEnglish
    Pages (from-to)379-383
    Number of pages5
    JournalApplied Surface Science
    Volume197-198
    DOIs
    Publication statusPublished - Jan 1 2002
    EventCola 2001 - Tsukuba, Japan
    Duration: Oct 1 2001Oct 1 2001

    Fingerprint

    Laser ablation
    Pulsed lasers
    Pulsed laser deposition
    Growth temperature
    Ablation
    Velocity distribution
    Optoelectronic devices
    Solar cells
    Sensors

    All Science Journal Classification (ASJC) codes

    • Chemistry(all)
    • Condensed Matter Physics
    • Physics and Astronomy(all)
    • Surfaces and Interfaces
    • Surfaces, Coatings and Films

    Cite this

    Elimination of droplets using a vane velocity filter for pulsed laser ablation of FeSi 2 . / Yoshitake, Tsuyoshi; Shiraishi, Gousuke; Nagayama, Kunihito.

    In: Applied Surface Science, Vol. 197-198, 01.01.2002, p. 379-383.

    Research output: Contribution to journalConference article

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