Ellipsometric search for vapor layers at liquid-hydrophobic solid surfaces

Y. Takata, J. H.J. Cho, B. M. Law, Makoto Aratono

Research output: Contribution to journalArticle

31 Citations (Scopus)

Abstract

We use precision ellipsometry to evaluate the existence of nanometer thick vapor films at the surface between a liquid and a hydrophobic alkylsilane coated Si wafer. We find no evidence for such vapor films. All of our fluid-solid ellipsometry measurements can be explained using a double layer model consisting of an oxide plus silane layer between the fluid and bulk Si substrate. We have carefully checked our ellipsometer for residual phase shifts which might, under certain circumstances, cause a mis-interpretation of the experimental results. We find that the most reliable ellipsometric results for thin films (which are relatively immune to the presence of small residual phase shifts) are collected at the Brewster angle. The dielectric constant of the native oxide coating is also compared with similar measurements for two thick (∼ 100-300 nm) thermally grown oxide coatings on a Si wafer.

Original languageEnglish
Pages (from-to)1715-1721
Number of pages7
JournalLangmuir
Volume22
Issue number4
DOIs
Publication statusPublished - Feb 14 2006

Fingerprint

solid surfaces
Oxides
Vapors
Ellipsometry
vapors
Phase shift
ellipsometry
oxides
Liquids
phase shift
liquids
wafers
coatings
Silanes
Coatings
ellipsometers
Fluids
Brewster angle
fluids
silanes

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Spectroscopy
  • Electrochemistry

Cite this

Ellipsometric search for vapor layers at liquid-hydrophobic solid surfaces. / Takata, Y.; Cho, J. H.J.; Law, B. M.; Aratono, Makoto.

In: Langmuir, Vol. 22, No. 4, 14.02.2006, p. 1715-1721.

Research output: Contribution to journalArticle

Takata, Y. ; Cho, J. H.J. ; Law, B. M. ; Aratono, Makoto. / Ellipsometric search for vapor layers at liquid-hydrophobic solid surfaces. In: Langmuir. 2006 ; Vol. 22, No. 4. pp. 1715-1721.
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