Emergence of n-type characteristic of conjugated polymer field-effect transistors with calcium source-drain electrodes

Takeshi Yasuda, Katsuhiko Fujita, Tetsuo Tsutsui

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

We fabricated field-effect transistors (FETs) using a highly soluble fluorene-based polymer as an active layer utilizing a low-work-function metal, calcium as a source-drain electrode material. The n-type characteristic of polymer FETs was successfully realized by lowering the electron injection barrier, although polymer FETs with gold source-drain electrodes did not exhibit n-type or p-type characteristic. The well-defined n-type FET provides a useful means of measuring the electron transport property of new organic semiconductors.

Original languageEnglish
Pages (from-to)7731-7732
Number of pages2
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume43
Issue number11 A
DOIs
Publication statusPublished - Nov 1 2004

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Conjugated polymers
Field effect transistors
calcium
Calcium
field effect transistors
Electrodes
electrodes
polymers
Polymers
Electron transport properties
Electron injection
Semiconducting organic compounds
organic semiconductors
electrode materials
electrons
Gold
transport properties
injection
gold
Metals

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

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AB - We fabricated field-effect transistors (FETs) using a highly soluble fluorene-based polymer as an active layer utilizing a low-work-function metal, calcium as a source-drain electrode material. The n-type characteristic of polymer FETs was successfully realized by lowering the electron injection barrier, although polymer FETs with gold source-drain electrodes did not exhibit n-type or p-type characteristic. The well-defined n-type FET provides a useful means of measuring the electron transport property of new organic semiconductors.

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