Emergence of n-type characteristic of conjugated polymer field-effect transistors with calcium source-drain electrodes

Takeshi Yasuda, Katsuhiko Fujita, Tetsuo Tsutsui

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

We fabricated field-effect transistors (FETs) using a highly soluble fluorene-based polymer as an active layer utilizing a low-work-function metal, calcium as a source-drain electrode material. The n-type characteristic of polymer FETs was successfully realized by lowering the electron injection barrier, although polymer FETs with gold source-drain electrodes did not exhibit n-type or p-type characteristic. The well-defined n-type FET provides a useful means of measuring the electron transport property of new organic semiconductors.

Original languageEnglish
Pages (from-to)7731-7732
Number of pages2
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume43
Issue number11 A
DOIs
Publication statusPublished - Nov 1 2004

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

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