Emergence of Rapid Oxygen Surface Exchange Kinetics during in Situ Crystallization of Mixed Conducting Thin Film Oxides

Ting Chen, George F. Harrington, Juveria Masood, Kazunari Sasaki, Nicola H. Perry

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Abstract

The oxygen surface exchange kinetics of mixed ionic and electronic conducting oxides (MIECs) play a critical role in the efficiency of intermediate-to-high-temperature electrochemical devices. Although there is increasing interest in low-temperature preparation of MIEC thin films, the impact of the resultant varied degrees of crystallinity on the surface exchange kinetics has not been widely investigated. Here, we probe the effect of crystallization on oxygen surface exchange kinetics in situ, by applying an optical transmission relaxation (OTR) approach during annealing of amorphous films. OTR enables contact-free, in situ, and continuous quantification of the oxygen surface exchange coefficient (k chem ); we previously applied it to Pr x Ce 1-x O 2-δ and SrTi 1-x Fe x O 3-δ thin films. In this work, the OTR approach was successfully extended to other mixed conducting thin film compositions for the first time (i.e., perovskite SrTi 0.65 Co 0.35 O 3-δ and Ruddlesden-Popper Sr 2 Ti 0.65 Fe 0.35 O 4±δ ), as well as to Pr 0.1 Ce 0.9 O 2-δ , enabling quantification of the k chem of their native surfaces and comparison of the behavior of films with different final crystal structures. All thin films were prepared by pulsed laser deposition at 25 or 700-800 °C and subject to subsequent thermal treatments with simultaneous OTR monitoring of k chem . The surface roughness, grain size, and crystallinity were evaluated by scanning probe microscopy, X-ray diffraction, scanning electron microscopy, and transmission electron microscopy. Fluorite Pr 0.1 Ce 0.9 O 2-δ films grown at 25 °C did not exhibit an increase in k chem after annealing, as they were already crystalline as grown at 25 °C. For all other compositions, OTR enabled in situ observation of both the crystallization process and the emergence of rapid surface exchange kinetics immediately upon crystallization. Perovskite SrTi 0.65 Co 0.35 O 3-δ and Ruddlesden-Popper Sr 2 Ti 0.65 Fe 0.35 O 4±δ thin films grown at 25 °C exhibited at least 1-2 orders of magnitude enhanced k chem after annealing compared with highly crystalline thin films grown at 800 °C, indicating the benefits of in situ crystallization.

Original languageEnglish
Pages (from-to)9102-9116
Number of pages15
JournalACS Applied Materials and Interfaces
Volume11
Issue number9
DOIs
Publication statusPublished - Mar 6 2019

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Crystallization
Oxides
Light transmission
Oxygen
Thin films
Kinetics
Annealing
Perovskite
Crystalline materials
Scanning probe microscopy
Fluorspar
Amorphous films
Pulsed laser deposition
Chemical analysis
Crystal structure
Surface roughness
Heat treatment
Transmission electron microscopy
X ray diffraction
Temperature

All Science Journal Classification (ASJC) codes

  • Materials Science(all)

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Emergence of Rapid Oxygen Surface Exchange Kinetics during in Situ Crystallization of Mixed Conducting Thin Film Oxides. / Chen, Ting; Harrington, George F.; Masood, Juveria; Sasaki, Kazunari; Perry, Nicola H.

In: ACS Applied Materials and Interfaces, Vol. 11, No. 9, 06.03.2019, p. 9102-9116.

Research output: Contribution to journalArticle

Chen, Ting ; Harrington, George F. ; Masood, Juveria ; Sasaki, Kazunari ; Perry, Nicola H. / Emergence of Rapid Oxygen Surface Exchange Kinetics during in Situ Crystallization of Mixed Conducting Thin Film Oxides. In: ACS Applied Materials and Interfaces. 2019 ; Vol. 11, No. 9. pp. 9102-9116.
@article{c13c555bb89c4af892bed12e04d0c3d9,
title = "Emergence of Rapid Oxygen Surface Exchange Kinetics during in Situ Crystallization of Mixed Conducting Thin Film Oxides",
abstract = "The oxygen surface exchange kinetics of mixed ionic and electronic conducting oxides (MIECs) play a critical role in the efficiency of intermediate-to-high-temperature electrochemical devices. Although there is increasing interest in low-temperature preparation of MIEC thin films, the impact of the resultant varied degrees of crystallinity on the surface exchange kinetics has not been widely investigated. Here, we probe the effect of crystallization on oxygen surface exchange kinetics in situ, by applying an optical transmission relaxation (OTR) approach during annealing of amorphous films. OTR enables contact-free, in situ, and continuous quantification of the oxygen surface exchange coefficient (k chem ); we previously applied it to Pr x Ce 1-x O 2-δ and SrTi 1-x Fe x O 3-δ thin films. In this work, the OTR approach was successfully extended to other mixed conducting thin film compositions for the first time (i.e., perovskite SrTi 0.65 Co 0.35 O 3-δ and Ruddlesden-Popper Sr 2 Ti 0.65 Fe 0.35 O 4±δ ), as well as to Pr 0.1 Ce 0.9 O 2-δ , enabling quantification of the k chem of their native surfaces and comparison of the behavior of films with different final crystal structures. All thin films were prepared by pulsed laser deposition at 25 or 700-800 °C and subject to subsequent thermal treatments with simultaneous OTR monitoring of k chem . The surface roughness, grain size, and crystallinity were evaluated by scanning probe microscopy, X-ray diffraction, scanning electron microscopy, and transmission electron microscopy. Fluorite Pr 0.1 Ce 0.9 O 2-δ films grown at 25 °C did not exhibit an increase in k chem after annealing, as they were already crystalline as grown at 25 °C. For all other compositions, OTR enabled in situ observation of both the crystallization process and the emergence of rapid surface exchange kinetics immediately upon crystallization. Perovskite SrTi 0.65 Co 0.35 O 3-δ and Ruddlesden-Popper Sr 2 Ti 0.65 Fe 0.35 O 4±δ thin films grown at 25 °C exhibited at least 1-2 orders of magnitude enhanced k chem after annealing compared with highly crystalline thin films grown at 800 °C, indicating the benefits of in situ crystallization.",
author = "Ting Chen and Harrington, {George F.} and Juveria Masood and Kazunari Sasaki and Perry, {Nicola H.}",
year = "2019",
month = "3",
day = "6",
doi = "10.1021/acsami.8b21285",
language = "English",
volume = "11",
pages = "9102--9116",
journal = "ACS applied materials & interfaces",
issn = "1944-8244",
publisher = "American Chemical Society",
number = "9",

}

TY - JOUR

T1 - Emergence of Rapid Oxygen Surface Exchange Kinetics during in Situ Crystallization of Mixed Conducting Thin Film Oxides

AU - Chen, Ting

AU - Harrington, George F.

AU - Masood, Juveria

AU - Sasaki, Kazunari

AU - Perry, Nicola H.

PY - 2019/3/6

Y1 - 2019/3/6

N2 - The oxygen surface exchange kinetics of mixed ionic and electronic conducting oxides (MIECs) play a critical role in the efficiency of intermediate-to-high-temperature electrochemical devices. Although there is increasing interest in low-temperature preparation of MIEC thin films, the impact of the resultant varied degrees of crystallinity on the surface exchange kinetics has not been widely investigated. Here, we probe the effect of crystallization on oxygen surface exchange kinetics in situ, by applying an optical transmission relaxation (OTR) approach during annealing of amorphous films. OTR enables contact-free, in situ, and continuous quantification of the oxygen surface exchange coefficient (k chem ); we previously applied it to Pr x Ce 1-x O 2-δ and SrTi 1-x Fe x O 3-δ thin films. In this work, the OTR approach was successfully extended to other mixed conducting thin film compositions for the first time (i.e., perovskite SrTi 0.65 Co 0.35 O 3-δ and Ruddlesden-Popper Sr 2 Ti 0.65 Fe 0.35 O 4±δ ), as well as to Pr 0.1 Ce 0.9 O 2-δ , enabling quantification of the k chem of their native surfaces and comparison of the behavior of films with different final crystal structures. All thin films were prepared by pulsed laser deposition at 25 or 700-800 °C and subject to subsequent thermal treatments with simultaneous OTR monitoring of k chem . The surface roughness, grain size, and crystallinity were evaluated by scanning probe microscopy, X-ray diffraction, scanning electron microscopy, and transmission electron microscopy. Fluorite Pr 0.1 Ce 0.9 O 2-δ films grown at 25 °C did not exhibit an increase in k chem after annealing, as they were already crystalline as grown at 25 °C. For all other compositions, OTR enabled in situ observation of both the crystallization process and the emergence of rapid surface exchange kinetics immediately upon crystallization. Perovskite SrTi 0.65 Co 0.35 O 3-δ and Ruddlesden-Popper Sr 2 Ti 0.65 Fe 0.35 O 4±δ thin films grown at 25 °C exhibited at least 1-2 orders of magnitude enhanced k chem after annealing compared with highly crystalline thin films grown at 800 °C, indicating the benefits of in situ crystallization.

AB - The oxygen surface exchange kinetics of mixed ionic and electronic conducting oxides (MIECs) play a critical role in the efficiency of intermediate-to-high-temperature electrochemical devices. Although there is increasing interest in low-temperature preparation of MIEC thin films, the impact of the resultant varied degrees of crystallinity on the surface exchange kinetics has not been widely investigated. Here, we probe the effect of crystallization on oxygen surface exchange kinetics in situ, by applying an optical transmission relaxation (OTR) approach during annealing of amorphous films. OTR enables contact-free, in situ, and continuous quantification of the oxygen surface exchange coefficient (k chem ); we previously applied it to Pr x Ce 1-x O 2-δ and SrTi 1-x Fe x O 3-δ thin films. In this work, the OTR approach was successfully extended to other mixed conducting thin film compositions for the first time (i.e., perovskite SrTi 0.65 Co 0.35 O 3-δ and Ruddlesden-Popper Sr 2 Ti 0.65 Fe 0.35 O 4±δ ), as well as to Pr 0.1 Ce 0.9 O 2-δ , enabling quantification of the k chem of their native surfaces and comparison of the behavior of films with different final crystal structures. All thin films were prepared by pulsed laser deposition at 25 or 700-800 °C and subject to subsequent thermal treatments with simultaneous OTR monitoring of k chem . The surface roughness, grain size, and crystallinity were evaluated by scanning probe microscopy, X-ray diffraction, scanning electron microscopy, and transmission electron microscopy. Fluorite Pr 0.1 Ce 0.9 O 2-δ films grown at 25 °C did not exhibit an increase in k chem after annealing, as they were already crystalline as grown at 25 °C. For all other compositions, OTR enabled in situ observation of both the crystallization process and the emergence of rapid surface exchange kinetics immediately upon crystallization. Perovskite SrTi 0.65 Co 0.35 O 3-δ and Ruddlesden-Popper Sr 2 Ti 0.65 Fe 0.35 O 4±δ thin films grown at 25 °C exhibited at least 1-2 orders of magnitude enhanced k chem after annealing compared with highly crystalline thin films grown at 800 °C, indicating the benefits of in situ crystallization.

UR - http://www.scopus.com/inward/record.url?scp=85062340819&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85062340819&partnerID=8YFLogxK

U2 - 10.1021/acsami.8b21285

DO - 10.1021/acsami.8b21285

M3 - Article

C2 - 30676719

AN - SCOPUS:85062340819

VL - 11

SP - 9102

EP - 9116

JO - ACS applied materials & interfaces

JF - ACS applied materials & interfaces

SN - 1944-8244

IS - 9

ER -