TY - JOUR
T1 - Emission from a dipole-forbidden energy state in a GaAs quantum-ring induced by dressed photon
AU - Yatsui, T.
AU - Nomura, W.
AU - Mano, T.
AU - Miyazaki, H. T.
AU - Sakoda, K.
AU - Kawazoe, T.
AU - Ohtsu, M.
N1 - Funding Information:
This work was partially supported by a Grant-in-Aid for Young Scientists (A) and Challenging Exploratory Research, Grants-in-Aid for Scientific Research, Japan Society for the Promotion of Science (JSPS) and The New Energy and Industrial Technology Development Organization (NEDO) Project “Development of Next-generation High-performance Technology for Photovoltaic Power Generation System.”
PY - 2014/4
Y1 - 2014/4
N2 - The emission intensity from the dipole-forbidden state in a GaAs quantum-ring was increased via close proximity with an aperture fiber probe to induce a near-field interaction between the probe apex and the quantum-ring. As a result, a significant decrease was observed in the decay time of the emission from a dipole-forbidden energy state.
AB - The emission intensity from the dipole-forbidden state in a GaAs quantum-ring was increased via close proximity with an aperture fiber probe to induce a near-field interaction between the probe apex and the quantum-ring. As a result, a significant decrease was observed in the decay time of the emission from a dipole-forbidden energy state.
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U2 - 10.1007/s00339-013-7905-y
DO - 10.1007/s00339-013-7905-y
M3 - Article
AN - SCOPUS:84897913871
SN - 0947-8396
VL - 115
SP - 1
EP - 4
JO - Applied Physics A: Materials Science and Processing
JF - Applied Physics A: Materials Science and Processing
IS - 1
ER -