Empirical interatomic potential calculations for relative stability of Ga adatom on GaAs(1 0 0) and (n11)A surfaces

Y. Kangawa, T. Ito, A. Taguchi, K. Shiraishi, T. Ohachi

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3 Citations (Scopus)

Abstract

Relative stability of Ga adatom on GaAs(1 0 0)-(2 × 4)β2 and GaAs(n 1 1)A (n = 2, 3 and 4) surfaces are investigated by empirical interatomic potential calculations. The calculated results suggest that Ga on (3 1 1)A is the most stable amongst all (n 1 1)A surfaces because the strain around the Ga adatom on (3 1 1)A is the smallest in the systems. Moreover, we studied the temperature dependence of Ga sticking coefficient on each surface using calculated Ga adsorption energy and chemical potential of atomic Ga in the vapor phase. The results imply that Ga sticking coefficient on (1 0 0)-(2 × 4)β2 and (4 1 1)A decreases with increase of temperature T at T > 850 K, while it is almost unity on (2 1 1)A and (3 1 1)A around this temperature range.

Original languageEnglish
Pages (from-to)223-226
Number of pages4
JournalJournal of Crystal Growth
Volume237-239
Issue number1 4 I
DOIs
Publication statusPublished - Apr 2002
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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