TY - JOUR
T1 - Empirical interatomic potential calculations for relative stability of Ga adatom on GaAs(1 0 0) and (n11)A surfaces
AU - Kangawa, Y.
AU - Ito, T.
AU - Taguchi, A.
AU - Shiraishi, K.
AU - Ohachi, T.
N1 - Funding Information:
This work was partly supported by JSPS Research for the Future Program in the Area of Atomic Scale Surface and Interface Dynamics.
PY - 2002/4
Y1 - 2002/4
N2 - Relative stability of Ga adatom on GaAs(1 0 0)-(2 × 4)β2 and GaAs(n 1 1)A (n = 2, 3 and 4) surfaces are investigated by empirical interatomic potential calculations. The calculated results suggest that Ga on (3 1 1)A is the most stable amongst all (n 1 1)A surfaces because the strain around the Ga adatom on (3 1 1)A is the smallest in the systems. Moreover, we studied the temperature dependence of Ga sticking coefficient on each surface using calculated Ga adsorption energy and chemical potential of atomic Ga in the vapor phase. The results imply that Ga sticking coefficient on (1 0 0)-(2 × 4)β2 and (4 1 1)A decreases with increase of temperature T at T > 850 K, while it is almost unity on (2 1 1)A and (3 1 1)A around this temperature range.
AB - Relative stability of Ga adatom on GaAs(1 0 0)-(2 × 4)β2 and GaAs(n 1 1)A (n = 2, 3 and 4) surfaces are investigated by empirical interatomic potential calculations. The calculated results suggest that Ga on (3 1 1)A is the most stable amongst all (n 1 1)A surfaces because the strain around the Ga adatom on (3 1 1)A is the smallest in the systems. Moreover, we studied the temperature dependence of Ga sticking coefficient on each surface using calculated Ga adsorption energy and chemical potential of atomic Ga in the vapor phase. The results imply that Ga sticking coefficient on (1 0 0)-(2 × 4)β2 and (4 1 1)A decreases with increase of temperature T at T > 850 K, while it is almost unity on (2 1 1)A and (3 1 1)A around this temperature range.
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U2 - 10.1016/S0022-0248(01)01910-8
DO - 10.1016/S0022-0248(01)01910-8
M3 - Article
AN - SCOPUS:4243862819
SN - 0022-0248
VL - 237-239
SP - 223
EP - 226
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
IS - 1 4 I
ER -