Encapsulated gate-all-around InAs nanowire field-effect transistors

Satoshi Sasaki, Kouta Tateno, Guoqiang Zhang, Henri Suominen, Yuichi Harada, Shiro Saito, Akira Fujiwara, Tetsuomi Sogawa, Koji Muraki

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14 Citations (Scopus)


We report the fabrication of lateral gate-all-around InAs nanowire field-effect transistors whose gate overlaps the source and drain electrodes and thus fully encapsulates the nanowire channel. They feature large drive current and transconductance that surpass those of conventional non-gate-overlap devices. The improved device characteristics can be attributed to the elimination of access resistance associated with ungated segments between the gate and source/drain electrodes. Our data also reveal a correlation between the normalized transconductance and the threshold voltage, which points to a beneficial effect of our wet-etching procedure performed prior to the atomic-layer-deposition of the gate dielectric.

Original languageEnglish
Article number213502
JournalApplied Physics Letters
Issue number21
Publication statusPublished - Nov 18 2013
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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  • Cite this

    Sasaki, S., Tateno, K., Zhang, G., Suominen, H., Harada, Y., Saito, S., Fujiwara, A., Sogawa, T., & Muraki, K. (2013). Encapsulated gate-all-around InAs nanowire field-effect transistors. Applied Physics Letters, 103(21), [213502]. https://doi.org/10.1063/1.4832058