Energy band diagram of ferroelectric heterostructures and its application to the thermodynamic feasibility of ferroelectric FET

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Abstract

A thermodynamic scheme for drawing energy band diagrams of ferroelectric heterostructures is presented. It incorporates band bending of the semiconductor and the ferroelectric due to spontaneous polarization into the procedure used for the semiconductor heterojunction. Using the diagram, the thermodynamic properties of the ferroelectric/insulator/semiconductor are investigated. It successfully explains the stability and the value of the semiconductor charge space. For thick insulator layers, the space charge is almost independent of conventional ferroelectric parameters and is mainly determined by the properties of the ferroelectric as a semiconductor. Additionally, the results explain the bistability of the ferroelectric on oxides related to high-Tc superconductors.

Original languageEnglish
Pages (from-to)59-65
Number of pages7
JournalSolid State Ionics
Volume108
Issue number1-4
Publication statusPublished - May 1 1998

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Field effect transistors
Band structure
Ferroelectric materials
energy bands
Heterojunctions
field effect transistors
diagrams
Thermodynamics
thermodynamics
Semiconductor materials
space charge
Electric space charge
insulators
heterojunctions
Oxides
thermodynamic properties
Superconducting materials
Thermodynamic properties
oxides
Polarization

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics

Cite this

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abstract = "A thermodynamic scheme for drawing energy band diagrams of ferroelectric heterostructures is presented. It incorporates band bending of the semiconductor and the ferroelectric due to spontaneous polarization into the procedure used for the semiconductor heterojunction. Using the diagram, the thermodynamic properties of the ferroelectric/insulator/semiconductor are investigated. It successfully explains the stability and the value of the semiconductor charge space. For thick insulator layers, the space charge is almost independent of conventional ferroelectric parameters and is mainly determined by the properties of the ferroelectric as a semiconductor. Additionally, the results explain the bistability of the ferroelectric on oxides related to high-Tc superconductors.",
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AB - A thermodynamic scheme for drawing energy band diagrams of ferroelectric heterostructures is presented. It incorporates band bending of the semiconductor and the ferroelectric due to spontaneous polarization into the procedure used for the semiconductor heterojunction. Using the diagram, the thermodynamic properties of the ferroelectric/insulator/semiconductor are investigated. It successfully explains the stability and the value of the semiconductor charge space. For thick insulator layers, the space charge is almost independent of conventional ferroelectric parameters and is mainly determined by the properties of the ferroelectric as a semiconductor. Additionally, the results explain the bistability of the ferroelectric on oxides related to high-Tc superconductors.

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