Energy levels and solubility of electrically active cobalt in silicon studied by combined hall and dlts measurements

Hajime Kitagawa, Hiroshi Nakashima, Kimio Hashimoto

Research output: Contribution to journal › Article

Original language	English
Pages (from-to)	373-374
Number of pages	2
Journal	Japanese journal of applied physics
Volume	24
Issue number	3 R
DOIs	https://doi.org/10.1143/JJAP.24.373
Publication status	Published - Mar 1985

Cite this

@article{f1e19dc37d7c4a3591a9eb8ce2c88eef,

title = "Energy levels and solubility of electrically active cobalt in silicon studied by combined hall and dlts measurements",

author = "Hajime Kitagawa and Hiroshi Nakashima and Kimio Hashimoto",

year = "1985",

month = mar,

doi = "10.1143/JJAP.24.373",

language = "English",

volume = "24",

pages = "373--374",

journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",

issn = "0021-4922",

publisher = "Institute of Physics",

number = "3 R",

}

TY - JOUR

T1 - Energy levels and solubility of electrically active cobalt in silicon studied by combined hall and dlts measurements

AU - Kitagawa, Hajime

AU - Nakashima, Hiroshi

AU - Hashimoto, Kimio

PY - 1985/3

Y1 - 1985/3

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U2 - 10.1143/JJAP.24.373

DO - 10.1143/JJAP.24.373

M3 - Article

AN - SCOPUS:0022026265

VL - 24

SP - 373

EP - 374

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

IS - 3 R

ER -