ENERGY LEVELS OF ELECTRICALLY ACTIVE COBALT IN SILICON.

Hajime Kitagawa, Hiroshi Nakashima, Kimio Hashimoto

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)

Abstract

Hall measurements and combined Hall and DLTS measurements for cobalt-doped n- and p-type silicon are carried out to reveal cobalt levels and cobalt-related levels in silicon. The impurity level assignment of cobalt in silicon, donor or acceptor, is well established. It is found that cobalt has an amphoteric nature in silicon, i. e. cobalt center has neutral, negatively and positively charged states.

Original languageEnglish
Pages (from-to)119-130
Number of pages12
JournalMemoirs of the Kyushu University, Faculty of Engineering
Volume46
Issue number2
Publication statusPublished - Jun 1 1986
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Energy(all)
  • Atmospheric Science
  • Earth and Planetary Sciences(all)
  • Management of Technology and Innovation

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