Enhanced crystal nucleation in a-Si on SiO2 by local Ge doping

Taizoh Sadoh, K. Nagatomo, I. Tsunoda, A. Kenjo, T. Enokida, M. Miyao

Research output: Contribution to journalArticle

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Abstract

The effects of local Ge doping on the crystal nucleation in the solid-phase crystallization (SPC) of a-Si films on SiO2 films were investigated. Three types of sample structures, (a) a-Si/a-Ge/a-Si/SiO2, (b) a-Si/a-Ge/SiO2, and (c) SiO2/a-Ge/a-Si/SiO2, were prepared and annealed at 600 °C. For the structure (a) with a thin (∼5 nm) Ge film, Ge atoms completely diffused into a-Si films, and SPC was not enhanced. On the other hand, for the structure (a) with Ge films thicker than 10 nm, Ge atoms were localized at the initial position. Such abnormal retardation of Ge diffusion was remarkable for the structures (b) and (c) even for samples with thin Ge films. For samples with Ge localization, significant enhancement of SPC of a-Si was observed. These results indicated that crystal nucleation was initiated in the localized Ge films, and then propagated into a-Si films. The local Ge doping at a-Si/SiO2 interfaces can be employed to selectively induce the nucleation at the interfaces.

Original languageEnglish
Pages (from-to)99-102
Number of pages4
JournalThin Solid Films
Volume464-465
DOIs
Publication statusPublished - Oct 1 2004

Fingerprint

Nucleation
Doping (additives)
nucleation
Crystals
crystals
Crystallization
solid phases
crystallization
Atoms
thick films
atoms
Thick films
augmentation
thin films

All Science Journal Classification (ASJC) codes

  • Surfaces, Coatings and Films
  • Condensed Matter Physics
  • Surfaces and Interfaces

Cite this

Sadoh, T., Nagatomo, K., Tsunoda, I., Kenjo, A., Enokida, T., & Miyao, M. (2004). Enhanced crystal nucleation in a-Si on SiO2 by local Ge doping. Thin Solid Films, 464-465, 99-102. https://doi.org/10.1016/j.tsf.2004.06.010

Enhanced crystal nucleation in a-Si on SiO2 by local Ge doping. / Sadoh, Taizoh; Nagatomo, K.; Tsunoda, I.; Kenjo, A.; Enokida, T.; Miyao, M.

In: Thin Solid Films, Vol. 464-465, 01.10.2004, p. 99-102.

Research output: Contribution to journalArticle

Sadoh, T, Nagatomo, K, Tsunoda, I, Kenjo, A, Enokida, T & Miyao, M 2004, 'Enhanced crystal nucleation in a-Si on SiO2 by local Ge doping', Thin Solid Films, vol. 464-465, pp. 99-102. https://doi.org/10.1016/j.tsf.2004.06.010
Sadoh T, Nagatomo K, Tsunoda I, Kenjo A, Enokida T, Miyao M. Enhanced crystal nucleation in a-Si on SiO2 by local Ge doping. Thin Solid Films. 2004 Oct 1;464-465:99-102. https://doi.org/10.1016/j.tsf.2004.06.010
Sadoh, Taizoh ; Nagatomo, K. ; Tsunoda, I. ; Kenjo, A. ; Enokida, T. ; Miyao, M. / Enhanced crystal nucleation in a-Si on SiO2 by local Ge doping. In: Thin Solid Films. 2004 ; Vol. 464-465. pp. 99-102.
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