Ion beam stimulated solid phase crystallization of a-Si 1-x Ge x (0≤x≤1) on SiO 2 has been investigated. The critical temperature to cause crystal nucleation can be successfully decreased by 150°C for a-Si 1-x Ge x with all Ge fractions (0-100%) by using ion stimulation. As a result, crystal growth below the softening temperature (∼500°C) of glass substrates was achieved for samples with Ge fractions exceeding 50%. This method combined with Ge doping and ion stimulation will be a powerful tool to fabricate poly-SiGe TFTs on low cost glass substrates.
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Physics and Astronomy(all)
- Surfaces and Interfaces
- Surfaces, Coatings and Films