Abstract
The effect of gas species on the degradation of gate oxides due to plasma exposure in reactive ion etching has been investigated. Gases tested were H2, Ar, Xe, and O2. The oxide degradation was evaluated by applying a constant-current stress and measuring the charge-to-breakdown Qbd of metal/oxide/silicon capacitors. It has been found that O2 plasma significantly degrades the reliability of the gate oxide Characterization of plasmas using a Langmuir probe has shown that O2 gas tends to produce nonuniform plasma because of its electronegative nature, and thus enhances degradation of gate oxide
| Original language | English |
|---|---|
| Pages (from-to) | 670-673 |
| Number of pages | 4 |
| Journal | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures |
| Volume | 16 |
| Issue number | 2 |
| Publication status | Published - Mar 1 1998 |
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All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Electrical and Electronic Engineering
Cite this
Arita, K., Takihara, H., & Asano, T. (1998). Enhanced degradation of gate oxide in negative-gas plasma during reactive ion etching. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 16(2), 670-673.