Enhanced degradation of gate oxide in negative-gas plasma during reactive ion etching

Kiyoshi Arita; Hirotaka Takihara; Tanemasa Asano

doi:10.1116/1.589878

Enhanced degradation of gate oxide in negative-gas plasma during reactive ion etching

Kiyoshi Arita, Hirotaka Takihara, Tanemasa Asano

Center for Japan-Egypt Cooperation in Science and Technology（E-JUST Center）

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

The effect of gas species on the degradation of gate oxides due to plasma exposure in reactive ion etching has been investigated. Gases tested were H₂, Ar, Xe, and O₂. The oxide degradation was evaluated by applying a constant-current stress and measuring the charge-to-breakdown Q_bd of metal/oxide/silicon capacitors. It has been found that O₂ plasma significantly degrades the reliability of the gate oxide Characterization of plasmas using a Langmuir probe has shown that O₂ gas tends to produce nonuniform plasma because of its electronegative nature, and thus enhances degradation of gate oxide

Original language	English
Pages (from-to)	670-673
Number of pages	4
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	16
Issue number	2
DOIs	https://doi.org/10.1116/1.589878
Publication status	Published - 1998

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Electrical and Electronic Engineering

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10.1116/1.589878

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abstract = "The effect of gas species on the degradation of gate oxides due to plasma exposure in reactive ion etching has been investigated. Gases tested were H2, Ar, Xe, and O2. The oxide degradation was evaluated by applying a constant-current stress and measuring the charge-to-breakdown Qbd of metal/oxide/silicon capacitors. It has been found that O2 plasma significantly degrades the reliability of the gate oxide Characterization of plasmas using a Langmuir probe has shown that O2 gas tends to produce nonuniform plasma because of its electronegative nature, and thus enhances degradation of gate oxide",

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AU - Arita, Kiyoshi

AU - Takihara, Hirotaka

AU - Asano, Tanemasa

PY - 1998

Y1 - 1998

N2 - The effect of gas species on the degradation of gate oxides due to plasma exposure in reactive ion etching has been investigated. Gases tested were H2, Ar, Xe, and O2. The oxide degradation was evaluated by applying a constant-current stress and measuring the charge-to-breakdown Qbd of metal/oxide/silicon capacitors. It has been found that O2 plasma significantly degrades the reliability of the gate oxide Characterization of plasmas using a Langmuir probe has shown that O2 gas tends to produce nonuniform plasma because of its electronegative nature, and thus enhances degradation of gate oxide

AB - The effect of gas species on the degradation of gate oxides due to plasma exposure in reactive ion etching has been investigated. Gases tested were H2, Ar, Xe, and O2. The oxide degradation was evaluated by applying a constant-current stress and measuring the charge-to-breakdown Qbd of metal/oxide/silicon capacitors. It has been found that O2 plasma significantly degrades the reliability of the gate oxide Characterization of plasmas using a Langmuir probe has shown that O2 gas tends to produce nonuniform plasma because of its electronegative nature, and thus enhances degradation of gate oxide

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Enhanced degradation of gate oxide in negative-gas plasma during reactive ion etching

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