Enhanced degradation of gate oxide in negative-gas plasma during reactive ion etching

Kiyoshi Arita, Hirotaka Takihara, Tanemasa Asano

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

The effect of gas species on the degradation of gate oxides due to plasma exposure in reactive ion etching has been investigated. Gases tested were H2, Ar, Xe, and O2. The oxide degradation was evaluated by applying a constant-current stress and measuring the charge-to-breakdown Qbd of metal/oxide/silicon capacitors. It has been found that O2 plasma significantly degrades the reliability of the gate oxide Characterization of plasmas using a Langmuir probe has shown that O2 gas tends to produce nonuniform plasma because of its electronegative nature, and thus enhances degradation of gate oxide

Original languageEnglish
Pages (from-to)670-673
Number of pages4
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume16
Issue number2
Publication statusPublished - Mar 1 1998
Externally publishedYes

Fingerprint

Plasma etching
Reactive ion etching
etching
degradation
Plasmas
Degradation
Oxides
oxides
Gases
gases
ions
nonuniform plasmas
Langmuir probes
Silicon oxides
electrostatic probes
metal oxides
capacitors
Capacitors
breakdown
silicon

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

Enhanced degradation of gate oxide in negative-gas plasma during reactive ion etching. / Arita, Kiyoshi; Takihara, Hirotaka; Asano, Tanemasa.

In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 16, No. 2, 01.03.1998, p. 670-673.

Research output: Contribution to journalArticle

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