Abstract
The effect of gas species on the degradation of gate oxides due to plasma exposure in reactive ion etching has been investigated. Gases tested were H2, Ar, Xe, and O2. The oxide degradation was evaluated by applying a constant-current stress and measuring the charge-to-breakdown Qbd of metal/oxide/silicon capacitors. It has been found that O2 plasma significantly degrades the reliability of the gate oxide Characterization of plasmas using a Langmuir probe has shown that O2 gas tends to produce nonuniform plasma because of its electronegative nature, and thus enhances degradation of gate oxide
| Original language | English |
|---|---|
| Pages (from-to) | 670-673 |
| Number of pages | 4 |
| Journal | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures |
| Volume | 16 |
| Issue number | 2 |
| Publication status | Published - Mar 1 1998 |
| Externally published | Yes |
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All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Electrical and Electronic Engineering
Cite this
Enhanced degradation of gate oxide in negative-gas plasma during reactive ion etching. / Arita, Kiyoshi; Takihara, Hirotaka; Asano, Tanemasa.
In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 16, No. 2, 01.03.1998, p. 670-673.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Enhanced degradation of gate oxide in negative-gas plasma during reactive ion etching
AU - Arita, Kiyoshi
AU - Takihara, Hirotaka
AU - Asano, Tanemasa
PY - 1998/3/1
Y1 - 1998/3/1
N2 - The effect of gas species on the degradation of gate oxides due to plasma exposure in reactive ion etching has been investigated. Gases tested were H2, Ar, Xe, and O2. The oxide degradation was evaluated by applying a constant-current stress and measuring the charge-to-breakdown Qbd of metal/oxide/silicon capacitors. It has been found that O2 plasma significantly degrades the reliability of the gate oxide Characterization of plasmas using a Langmuir probe has shown that O2 gas tends to produce nonuniform plasma because of its electronegative nature, and thus enhances degradation of gate oxide
AB - The effect of gas species on the degradation of gate oxides due to plasma exposure in reactive ion etching has been investigated. Gases tested were H2, Ar, Xe, and O2. The oxide degradation was evaluated by applying a constant-current stress and measuring the charge-to-breakdown Qbd of metal/oxide/silicon capacitors. It has been found that O2 plasma significantly degrades the reliability of the gate oxide Characterization of plasmas using a Langmuir probe has shown that O2 gas tends to produce nonuniform plasma because of its electronegative nature, and thus enhances degradation of gate oxide
UR - http://www.scopus.com/inward/record.url?scp=0004767417&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0004767417&partnerID=8YFLogxK
M3 - Article
VL - 16
SP - 670
EP - 673
JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
SN - 0734-211X
IS - 2
ER -