Enhanced electrical transparency by ultrathin LaAlO3 insertion at oxide metal/semiconductor heterointerfaces

Takeaki Yajima, Makoto Minohara, Christopher Bell, Hiroshi Kumigashira, Masaharu Oshima, Harold Y. Hwang, Yasuyuki Hikita

Research output: Contribution to journalArticlepeer-review

Abstract

We demonstrate that the electrical conductivity of metal/semiconductor oxide heterojunctions can be increased over 7 orders of magnitude by inserting an ultrathin layer of LaAlO3. This counterintuitive result, that an interfacial barrier can be driven transparent by inserting a wide-gap insulator, arises from the large internal electric field between the two polar LaAlO3 surfaces. This field modifies the effective band offset in the device, highlighting the ability to design the electrostatic boundary conditions with atomic precision.

Original languageEnglish
Pages (from-to)1622-1626
Number of pages5
JournalNano Letters
Volume15
Issue number3
DOIs
Publication statusPublished - Mar 11 2015

All Science Journal Classification (ASJC) codes

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering

Fingerprint Dive into the research topics of 'Enhanced electrical transparency by ultrathin LaAlO<sub>3</sub> insertion at oxide metal/semiconductor heterointerfaces'. Together they form a unique fingerprint.

Cite this