Enhanced electrical transparency by ultrathin LaAlO3 insertion at oxide metal/semiconductor heterointerfaces

Takeaki Yajima; Makoto Minohara; Christopher Bell; Hiroshi Kumigashira; Masaharu Oshima; Harold Y. Hwang; Yasuyuki Hikita

doi:10.1021/nl504169m

Enhanced electrical transparency by ultrathin LaAlO₃ insertion at oxide metal/semiconductor heterointerfaces

Takeaki Yajima, Makoto Minohara, Christopher Bell, Hiroshi Kumigashira, Masaharu Oshima, Harold Y. Hwang, Yasuyuki Hikita

Research output: Contribution to journal › Article › peer-review

22 Citations (Scopus)

Abstract

We demonstrate that the electrical conductivity of metal/semiconductor oxide heterojunctions can be increased over 7 orders of magnitude by inserting an ultrathin layer of LaAlO₃. This counterintuitive result, that an interfacial barrier can be driven transparent by inserting a wide-gap insulator, arises from the large internal electric field between the two polar LaAlO₃ surfaces. This field modifies the effective band offset in the device, highlighting the ability to design the electrostatic boundary conditions with atomic precision.

Original language	English
Pages (from-to)	1622-1626
Number of pages	5
Journal	Nano Letters
Volume	15
Issue number	3
DOIs	https://doi.org/10.1021/nl504169m
Publication status	Published - Mar 11 2015
Externally published	Yes

All Science Journal Classification (ASJC) codes

Bioengineering
Chemistry(all)
Materials Science(all)
Condensed Matter Physics
Mechanical Engineering

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10.1021/nl504169m

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@article{765e79a47e4c4e02ba6cd148fb9f9b82,

title = "Enhanced electrical transparency by ultrathin LaAlO3 insertion at oxide metal/semiconductor heterointerfaces",

abstract = "We demonstrate that the electrical conductivity of metal/semiconductor oxide heterojunctions can be increased over 7 orders of magnitude by inserting an ultrathin layer of LaAlO3. This counterintuitive result, that an interfacial barrier can be driven transparent by inserting a wide-gap insulator, arises from the large internal electric field between the two polar LaAlO3 surfaces. This field modifies the effective band offset in the device, highlighting the ability to design the electrostatic boundary conditions with atomic precision.",

author = "Takeaki Yajima and Makoto Minohara and Christopher Bell and Hiroshi Kumigashira and Masaharu Oshima and Hwang, {Harold Y.} and Yasuyuki Hikita",

note = "Publisher Copyright: {\textcopyright} 2015 American Chemical Society.",

year = "2015",

month = mar,

day = "11",

doi = "10.1021/nl504169m",

language = "English",

volume = "15",

pages = "1622--1626",

journal = "Nano Letters",

issn = "1530-6984",

publisher = "American Chemical Society",

number = "3",

}

TY - JOUR

T1 - Enhanced electrical transparency by ultrathin LaAlO3 insertion at oxide metal/semiconductor heterointerfaces

AU - Yajima, Takeaki

AU - Minohara, Makoto

AU - Bell, Christopher

AU - Kumigashira, Hiroshi

AU - Oshima, Masaharu

AU - Hwang, Harold Y.

AU - Hikita, Yasuyuki

PY - 2015/3/11

Y1 - 2015/3/11

N2 - We demonstrate that the electrical conductivity of metal/semiconductor oxide heterojunctions can be increased over 7 orders of magnitude by inserting an ultrathin layer of LaAlO3. This counterintuitive result, that an interfacial barrier can be driven transparent by inserting a wide-gap insulator, arises from the large internal electric field between the two polar LaAlO3 surfaces. This field modifies the effective band offset in the device, highlighting the ability to design the electrostatic boundary conditions with atomic precision.

AB - We demonstrate that the electrical conductivity of metal/semiconductor oxide heterojunctions can be increased over 7 orders of magnitude by inserting an ultrathin layer of LaAlO3. This counterintuitive result, that an interfacial barrier can be driven transparent by inserting a wide-gap insulator, arises from the large internal electric field between the two polar LaAlO3 surfaces. This field modifies the effective band offset in the device, highlighting the ability to design the electrostatic boundary conditions with atomic precision.

UR - http://www.scopus.com/inward/record.url?scp=85102497977&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85102497977&partnerID=8YFLogxK

U2 - 10.1021/nl504169m

DO - 10.1021/nl504169m

M3 - Article

AN - SCOPUS:85102497977

SN - 1530-6984

VL - 15

SP - 1622

EP - 1626

JO - Nano Letters

JF - Nano Letters

IS - 3

ER -

Enhanced electrical transparency by ultrathin LaAlO₃ insertion at oxide metal/semiconductor heterointerfaces

Abstract

All Science Journal Classification (ASJC) codes

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