Enhanced figure of merit of a porous thin film of bismuth antimony telluride

Makoto Kashiwagi; Shuzo Hirata; Kentaro Harada; Yanqiong Zheng; Koji Miyazaki; Masayuki Yahiro; Chihaya Adachi

doi:10.1063/1.3543852

Enhanced figure of merit of a porous thin film of bismuth antimony telluride

Makoto Kashiwagi, Shuzo Hirata, Kentaro Harada, Yanqiong Zheng, Koji Miyazaki, Masayuki Yahiro, Chihaya Adachi

Applied Chemistry

Research output: Contribution to journal › Article › peer-review

97 Citations (Scopus)

Abstract

A porous thin film of Bi_0.4Te₃Sb_1.6 with an enhanced figure of merit of 1.8 at room temperature was fabricated by flash evaporation on an alumina substrate containing hexagonally arranged nanopores with an average diameter of 20 nm, separated by an average distance of 50 nm. The thermal conductivity was significantly reduced compared with standard Bi_0.4Te₃Sb_1.6 films to 0.25 W/(m·K) with no major decrease in either the electrical conductivity (398 S/cm) or the Seebeck coefficient (198 μV/K). The reduction in thermal conductivity was rationalized using a model for the full distribution of the phonon mean free path in the film.

Original language	English
Article number	023114
Journal	Applied Physics Letters
Volume	98
Issue number	2
DOIs	https://doi.org/10.1063/1.3543852
Publication status	Published - Jan 10 2011

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.3543852

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abstract = "A porous thin film of Bi0.4Te3Sb1.6 with an enhanced figure of merit of 1.8 at room temperature was fabricated by flash evaporation on an alumina substrate containing hexagonally arranged nanopores with an average diameter of 20 nm, separated by an average distance of 50 nm. The thermal conductivity was significantly reduced compared with standard Bi0.4Te3Sb1.6 films to 0.25 W/(m·K) with no major decrease in either the electrical conductivity (398 S/cm) or the Seebeck coefficient (198 μV/K). The reduction in thermal conductivity was rationalized using a model for the full distribution of the phonon mean free path in the film.",

author = "Makoto Kashiwagi and Shuzo Hirata and Kentaro Harada and Yanqiong Zheng and Koji Miyazaki and Masayuki Yahiro and Chihaya Adachi",

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AU - Kashiwagi, Makoto

AU - Hirata, Shuzo

AU - Harada, Kentaro

AU - Zheng, Yanqiong

AU - Miyazaki, Koji

AU - Yahiro, Masayuki

AU - Adachi, Chihaya

N1 - Funding Information: This work was supported by the New Energy and Industrial Technology Development Organization (NEDO). The authors wish to thank Dr. Ishikawa at PicoTherm for performing thermal conductivity measurements.

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N2 - A porous thin film of Bi0.4Te3Sb1.6 with an enhanced figure of merit of 1.8 at room temperature was fabricated by flash evaporation on an alumina substrate containing hexagonally arranged nanopores with an average diameter of 20 nm, separated by an average distance of 50 nm. The thermal conductivity was significantly reduced compared with standard Bi0.4Te3Sb1.6 films to 0.25 W/(m·K) with no major decrease in either the electrical conductivity (398 S/cm) or the Seebeck coefficient (198 μV/K). The reduction in thermal conductivity was rationalized using a model for the full distribution of the phonon mean free path in the film.

AB - A porous thin film of Bi0.4Te3Sb1.6 with an enhanced figure of merit of 1.8 at room temperature was fabricated by flash evaporation on an alumina substrate containing hexagonally arranged nanopores with an average diameter of 20 nm, separated by an average distance of 50 nm. The thermal conductivity was significantly reduced compared with standard Bi0.4Te3Sb1.6 films to 0.25 W/(m·K) with no major decrease in either the electrical conductivity (398 S/cm) or the Seebeck coefficient (198 μV/K). The reduction in thermal conductivity was rationalized using a model for the full distribution of the phonon mean free path in the film.

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Enhanced figure of merit of a porous thin film of bismuth antimony telluride

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