Enhanced hardness of nanocarbon films deposited on cemented tungsten carbide substrates by coaxial arc plasma deposition owing to employing silicon-doped graphite targets

Mohamed Egiza, Kouki Murasawa, Ali M. Ali, Yasuo Fukui, Hidenobu Gonda, Masatoshi Sakurai, Tsuyoshi Yoshitake

Research output: Contribution to journalArticle

Abstract

1 at% Si-doped nanocrystalline diamond/amorphous carbon (NCD/a-C) composite films were deposited on cemented carbide (WC-Co) substrates by coaxial arc plasma deposition. The doping of Si evidently degraded the hardness of films directly deposited on the substrates due to catalytic effects of diffused Co atoms into the films. On the other hand, by employing undoped NCD/a-C buffer layers, the Co diffusion was suppressed and the hardness was enhanced from 42 to 60 GPa. It was found that the Si doping enhances the formation of C-C sp3 bonds, which resulted in the hardness enhancement in the case of suppressing the Co diffusion by insertion of undoped NCD/a-C buffer layers.

Original languageEnglish
Article number075507
JournalJapanese Journal of Applied Physics
Volume58
Issue number7
DOIs
Publication statusPublished - Jan 1 2019

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Plasma deposition
tungsten carbides
Tungsten carbide
Amorphous carbon
plasma jets
Diamonds
Graphite
hardness
graphite
Hardness
diamonds
Buffer layers
Silicon
carbon
silicon
Substrates
buffers
Doping (additives)
Carbon films
Composite films

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Enhanced hardness of nanocarbon films deposited on cemented tungsten carbide substrates by coaxial arc plasma deposition owing to employing silicon-doped graphite targets. / Egiza, Mohamed; Murasawa, Kouki; Ali, Ali M.; Fukui, Yasuo; Gonda, Hidenobu; Sakurai, Masatoshi; Yoshitake, Tsuyoshi.

In: Japanese Journal of Applied Physics, Vol. 58, No. 7, 075507, 01.01.2019.

Research output: Contribution to journalArticle

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AU - Egiza, Mohamed

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AU - Ali, Ali M.

AU - Fukui, Yasuo

AU - Gonda, Hidenobu

AU - Sakurai, Masatoshi

AU - Yoshitake, Tsuyoshi

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AB - 1 at% Si-doped nanocrystalline diamond/amorphous carbon (NCD/a-C) composite films were deposited on cemented carbide (WC-Co) substrates by coaxial arc plasma deposition. The doping of Si evidently degraded the hardness of films directly deposited on the substrates due to catalytic effects of diffused Co atoms into the films. On the other hand, by employing undoped NCD/a-C buffer layers, the Co diffusion was suppressed and the hardness was enhanced from 42 to 60 GPa. It was found that the Si doping enhances the formation of C-C sp3 bonds, which resulted in the hardness enhancement in the case of suppressing the Co diffusion by insertion of undoped NCD/a-C buffer layers.

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