Enhanced interfacial-nucleation in al-induced crystallization for (111) Oriented Si1-xGex (0 ≤ x ≤ 1) films on insulating substrates

Masashi Kurosawa, Naoyuki Kawabata, Taizoh Sadoh, Masanobu Miyao

Research output: Contribution to journalArticle

46 Citations (Scopus)

Abstract

Orientation-controlled Si1-xGex (0≤ x≤1) films on insulating substrates are essential to achieve high-efficiency solar-cells and highspeed thin-film-transistors. We investigate Al-induced crystallization of amorphous-Si1-xGex/Al-oxide/Al/quartz stacked-structures as a function of Ge-fraction, air-exposure time of Al surfaces, and thicknesses of Al and SiGe films. By tuning interfacial Al-oxide layer thickness, which is controlled by air-exposure time, (100) or (111) Si1-xGex (x < 0.2) layers are selectively formed. However, increase of Ge-fraction significantly enhances the random bulk-nucleation, which results in poly-crystalline Si1-xGe x (x ≥ 0.2) with random-orientations. To enhance interfacial-nucleation at Al/quartz over bulk-nucleation, film-thickness of Al and SiGe are thinned to 50 nm. This achieves (111)-oriented Si 1-xGex films with the whole Ge fractions. This oriented-growth can be explained by the theoretical calculation that (111) SiGe has the minimum surface energy on quartz substrates.

Original languageEnglish
JournalECS Journal of Solid State Science and Technology
Volume1
Issue number3
DOIs
Publication statusPublished - Dec 1 2012

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Quartz
Crystallization
Nucleation
Oxides
Substrates
Thin film transistors
Air
Interfacial energy
Film thickness
Solar cells
Tuning
Crystalline materials

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials

Cite this

Enhanced interfacial-nucleation in al-induced crystallization for (111) Oriented Si1-xGex (0 ≤ x ≤ 1) films on insulating substrates. / Kurosawa, Masashi; Kawabata, Naoyuki; Sadoh, Taizoh; Miyao, Masanobu.

In: ECS Journal of Solid State Science and Technology, Vol. 1, No. 3, 01.12.2012.

Research output: Contribution to journalArticle

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