Enhanced low-temperature oxidation of 4H-SiC using SrTi1-xMgxO3-δ

Li Li, Akihiro Ikeda, Tanemasa Asano

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

SrTi1-xMgxO3-δ, an oxidation catalyst, is employed to produce active oxygen species in an oxidation furnace and to enhance oxidation of 4H-SiC at low temperatures. The linear rate constant of the oxidation model at the 4H-SiC (0001)-Si surface at 800~900 °C is enhanced by two orders of magnitude in comparison to the conventional dry oxidation. The catalytic oxidation is, therefore, able to form a gate oxide at temperatures as low as 800°C. Interface state density in the energy range of 0.2~0.5 eV from the conduction band edge of the 4H-SiC oxidized with catalyst at 800°C is almost same as the one oxidized using the conventional dry oxidation at 1100 °C.

Original languageEnglish
Title of host publicationSilicon Carbide and Related Materials 2016
EditorsNikolaos Frangis, Konstantinos Zekentes, Konstantin V. Vasilevskiy, Konstantinos Zekentes
PublisherTrans Tech Publications Ltd
Pages356-359
Number of pages4
ISBN (Print)9783035710434
DOIs
Publication statusPublished - Jan 1 2017
Event11th European Conference on Silicon Carbide and Related Materials, ECSCRM 2016 - Halkidiki, Greece
Duration: Sep 25 2016Sep 29 2016

Publication series

NameMaterials Science Forum
Volume897 MSF
ISSN (Print)0255-5476

Other

Other11th European Conference on Silicon Carbide and Related Materials, ECSCRM 2016
CountryGreece
CityHalkidiki
Period9/25/169/29/16

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All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Li, L., Ikeda, A., & Asano, T. (2017). Enhanced low-temperature oxidation of 4H-SiC using SrTi1-xMgxO3-δ. In N. Frangis, K. Zekentes, K. V. Vasilevskiy, & K. Zekentes (Eds.), Silicon Carbide and Related Materials 2016 (pp. 356-359). (Materials Science Forum; Vol. 897 MSF). Trans Tech Publications Ltd. https://doi.org/10.4028/www.scientific.net/MSF.897.356