Enhanced low-temperature oxidation of 4H-SiC using SrTi1-xMgxO3-δ

Li Li, Akihiro Ikeda, Tanemasa Asano

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

SrTi1-xMgxO3-δ, an oxidation catalyst, is employed to produce active oxygen species in an oxidation furnace and to enhance oxidation of 4H-SiC at low temperatures. The linear rate constant of the oxidation model at the 4H-SiC (0001)-Si surface at 800~900 °C is enhanced by two orders of magnitude in comparison to the conventional dry oxidation. The catalytic oxidation is, therefore, able to form a gate oxide at temperatures as low as 800°C. Interface state density in the energy range of 0.2~0.5 eV from the conduction band edge of the 4H-SiC oxidized with catalyst at 800°C is almost same as the one oxidized using the conventional dry oxidation at 1100 °C.

Original languageEnglish
Title of host publicationSilicon Carbide and Related Materials 2016
EditorsKonstantinos Zekentes, Konstantinos Zekentes, Konstantin V. Vasilevskiy, Nikolaos Frangis
PublisherTrans Tech Publications Ltd
Pages356-359
Number of pages4
ISBN (Print)9783035710434
DOIs
Publication statusPublished - 2017
Event11th European Conference on Silicon Carbide and Related Materials, ECSCRM 2016 - Halkidiki, Greece
Duration: Sep 25 2016Sep 29 2016

Publication series

NameMaterials Science Forum
Volume897 MSF
ISSN (Print)0255-5476
ISSN (Electronic)1662-9752

Other

Other11th European Conference on Silicon Carbide and Related Materials, ECSCRM 2016
CountryGreece
CityHalkidiki
Period9/25/169/29/16

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Fingerprint Dive into the research topics of 'Enhanced low-temperature oxidation of 4H-SiC using SrTi<sub>1-x</sub>Mg<sub>x</sub>O<sub>3-δ</sub>'. Together they form a unique fingerprint.

Cite this