Enhanced low-temperature oxidation of 4H-SiC using SrTi1-xMgxO3-δ

Li Li; Akihiro Ikeda; Tanemasa Asano

doi:10.4028/www.scientific.net/MSF.897.356

Enhanced low-temperature oxidation of 4H-SiC using SrTi_1-xMg_xO_3-δ

Li Li, Akihiro Ikeda, Tanemasa Asano

Integrated Electronic Systems

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

SrTi_1-xMg_xO_3-δ, an oxidation catalyst, is employed to produce active oxygen species in an oxidation furnace and to enhance oxidation of 4H-SiC at low temperatures. The linear rate constant of the oxidation model at the 4H-SiC (0001)-Si surface at 800~900 °C is enhanced by two orders of magnitude in comparison to the conventional dry oxidation. The catalytic oxidation is, therefore, able to form a gate oxide at temperatures as low as 800°C. Interface state density in the energy range of 0.2~0.5 eV from the conduction band edge of the 4H-SiC oxidized with catalyst at 800°C is almost same as the one oxidized using the conventional dry oxidation at 1100 °C.

Original language	English
Title of host publication	Silicon Carbide and Related Materials 2016
Editors	Konstantinos Zekentes, Konstantinos Zekentes, Konstantin V. Vasilevskiy, Nikolaos Frangis
Publisher	Trans Tech Publications Ltd
Pages	356-359
Number of pages	4
ISBN (Print)	9783035710434
DOIs	https://doi.org/10.4028/www.scientific.net/MSF.897.356
Publication status	Published - 2017
Event	11th European Conference on Silicon Carbide and Related Materials, ECSCRM 2016 - Halkidiki, Greece Duration: Sept 25 2016 → Sept 29 2016

Publication series

Name	Materials Science Forum
Volume	897 MSF
ISSN (Print)	0255-5476
ISSN (Electronic)	1662-9752

Other

Other	11th European Conference on Silicon Carbide and Related Materials, ECSCRM 2016
Country/Territory	Greece
City	Halkidiki
Period	9/25/16 → 9/29/16

All Science Journal Classification (ASJC) codes

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Access to Document

10.4028/www.scientific.net/MSF.897.356

Cite this

Enhanced low-temperature oxidation of 4H-SiC using SrTi_1-xMg_xO_3-δ. / Li, Li; Ikeda, Akihiro; Asano, Tanemasa.

Silicon Carbide and Related Materials 2016. ed. / Konstantinos Zekentes; Konstantinos Zekentes; Konstantin V. Vasilevskiy; Nikolaos Frangis. Trans Tech Publications Ltd, 2017. p. 356-359 (Materials Science Forum; Vol. 897 MSF).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Li, L, Ikeda, A & Asano, T 2017, Enhanced low-temperature oxidation of 4H-SiC using SrTi_1-xMg_xO_3-δ. in K Zekentes, K Zekentes, KV Vasilevskiy & N Frangis (eds), Silicon Carbide and Related Materials 2016. Materials Science Forum, vol. 897 MSF, Trans Tech Publications Ltd, pp. 356-359, 11th European Conference on Silicon Carbide and Related Materials, ECSCRM 2016, Halkidiki, Greece, 9/25/16. https://doi.org/10.4028/www.scientific.net/MSF.897.356

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title = "Enhanced low-temperature oxidation of 4H-SiC using SrTi1-xMgxO3-δ",

abstract = "SrTi1-xMgxO3-δ, an oxidation catalyst, is employed to produce active oxygen species in an oxidation furnace and to enhance oxidation of 4H-SiC at low temperatures. The linear rate constant of the oxidation model at the 4H-SiC (0001)-Si surface at 800~900 °C is enhanced by two orders of magnitude in comparison to the conventional dry oxidation. The catalytic oxidation is, therefore, able to form a gate oxide at temperatures as low as 800°C. Interface state density in the energy range of 0.2~0.5 eV from the conduction band edge of the 4H-SiC oxidized with catalyst at 800°C is almost same as the one oxidized using the conventional dry oxidation at 1100 °C.",

author = "Li Li and Akihiro Ikeda and Tanemasa Asano",

note = "Funding Information: This work is supported in part by KAKENHI (No. 16K14258) from Japan Society for the Promotion of Science.; 11th European Conference on Silicon Carbide and Related Materials, ECSCRM 2016 ; Conference date: 25-09-2016 Through 29-09-2016",

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N2 - SrTi1-xMgxO3-δ, an oxidation catalyst, is employed to produce active oxygen species in an oxidation furnace and to enhance oxidation of 4H-SiC at low temperatures. The linear rate constant of the oxidation model at the 4H-SiC (0001)-Si surface at 800~900 °C is enhanced by two orders of magnitude in comparison to the conventional dry oxidation. The catalytic oxidation is, therefore, able to form a gate oxide at temperatures as low as 800°C. Interface state density in the energy range of 0.2~0.5 eV from the conduction band edge of the 4H-SiC oxidized with catalyst at 800°C is almost same as the one oxidized using the conventional dry oxidation at 1100 °C.

AB - SrTi1-xMgxO3-δ, an oxidation catalyst, is employed to produce active oxygen species in an oxidation furnace and to enhance oxidation of 4H-SiC at low temperatures. The linear rate constant of the oxidation model at the 4H-SiC (0001)-Si surface at 800~900 °C is enhanced by two orders of magnitude in comparison to the conventional dry oxidation. The catalytic oxidation is, therefore, able to form a gate oxide at temperatures as low as 800°C. Interface state density in the energy range of 0.2~0.5 eV from the conduction band edge of the 4H-SiC oxidized with catalyst at 800°C is almost same as the one oxidized using the conventional dry oxidation at 1100 °C.

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