Enhanced metal-induced lateral crystallization in amorphous Ge/Si/SiO 2 layered structure

Hiroshi Kanno, Atsushi Kenjo, Taizoh Sadoh, Masanobu Miyao

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

Metal-induced lateral crystallization (MILC) in a-Ge/a-Si/SiO2 layered structure has been investigated. Crystal nucleation was initiated in the a-Ge layer, which stimulated the bond rearrangement in a-Si. The MILC velocity of a-Si was successfully increased becoming threefold higher than that of a-Si/SiO2 single structure. As a result, poly-Si films with large areas were obtained after 550°C annealing, i.e., ∼10 μm for 5 h and ∼30 μm for 15 h. This will be a powerful tool for realizing large poly-Si areas on insulating films for system-in-displays and three-dimensional ultra-large scale integrated circuits.

Original languageEnglish
Pages (from-to)1852-1855
Number of pages4
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume43
Issue number4 B
DOIs
Publication statusPublished - Jan 1 2004

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Polysilicon
Crystallization
crystallization
Metals
metals
integrated circuits
Integrated circuits
Nucleation
Display devices
nucleation
Annealing
Crystals
annealing
crystals

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Enhanced metal-induced lateral crystallization in amorphous Ge/Si/SiO 2 layered structure. / Kanno, Hiroshi; Kenjo, Atsushi; Sadoh, Taizoh; Miyao, Masanobu.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 43, No. 4 B, 01.01.2004, p. 1852-1855.

Research output: Contribution to journalArticle

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